Sensor protection using a non-volatile memory cell
View Patent ↗A method and apparatus for protecting an electrical device using a non-volatile memory cell, such as an STRAM or RRAM memory cell. In some embodiments, a memory element is connected in parallel with a sensor element, where the memory element is configured to be repetitively reprogrammable between a high resistance state and a low resistance state. The memory element is programmed to the low resistance state when the sensor element is in a non-operational state and reprogrammed to the high resistance state when the sensor element is in an operational state.
1. A method comprising:
connecting a non-volatile memory element in parallel with a sensor element, the memory element configured to be repetitively reprogrammable between a high resistance state and a low resistance state;
programming the memory element to said low resistance state to place the sensor element in a non-operational state; and
reprogramming the memory element to said high resistance state to place the sensor element in an operational state.
2. The method of claim 1 , further comprising testing the sensor element while the sensor element is in the operational state.
3. The method of claim 1 , further comprising using the sensor element to transducer data from a storage medium while the sensor element is in the operational state.
4. The method of claim 1 , wherein a plurality of memory elements are connected in parallel with the sensor element.
5. The method of claim 1 , wherein the memory element is connected in series with a fuse.
6. The method of claim 1 , wherein the low resistance state of the memory element is a lower resistance than the sensor element.
7. The method of claim 1 , wherein multiple memory elements are connected in series with the sensor element.
8. The method of claim 1 , wherein the memory element is programmed to a low resistance state in response to a protection mode.
9. The method of claim 1 , wherein the memory element comprises a spin-torque transfer random access memory (STRAM) cell.
10. The method of claim 1 , wherein the memory element comprises a resistive random access memory (RRAM) cell.
11. An apparatus comprising a non-volatile memory element connected in parallel with a sensor element, the memory element configured to be repetitively reprogrammable between a high resistance state and a low resistance state, wherein the memory element is programmed to the low resistance state when the sensor element is in a non-operational state and reprogrammed to the high resistance state when the sensor element is in an operational state.
12. The apparatus of claim 11 , wherein the sensor comprises a read element of a data read/write transducer.
13. The apparatus of claim 11 , wherein the low resistance state of the memory element provides an energy discharge path for electrostatic discharge (ESD) and electrical overstress (EOS) events.
14. The apparatus of claim 11 , wherein a plurality of memory elements are connected in parallel with the sensor element.
15. The apparatus of claim 11 , wherein the memory element is connected in series with a fuse.
16. The apparatus of claim 11 , wherein the low resistance state of the memory element is a lower resistance than the sensor element.
17. The apparatus of claim 11 , wherein multiple memory elements are connected in series with the sensor element.
18. The apparatus of claim 11 , wherein the memory element is programmed to a low resistance state in response to a protection mode.
19. The apparatus of claim 11 , wherein the memory element comprises a spin-torque transfer random access memory (STRAM) cell.
20. The apparatus of claim 11 , wherein the memory element comprises a resistive random access memory (RRAM) cell.