Method of producing semiconductor device
View Patent ↗Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.
1. A method of producing a semiconductor device comprising:
forming a thin film by
(1) supplying a first reactant to a substrate accommodated in a processing chamber causing a first ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate;
(2) removing any surplus of the first reactant from the processing chamber;
(3) supplying a second reactant to the substrate causing a second ligand-exchange reaction changing the ligand after the first ligand-exchange into a reactive site;
(4) removing any surplus of the second reactant from the processing chamber;
supplying a plasma-excited third reactant to the substrate causing a ligand-exchange reaction exchanging a ligand which has not been exchange-reacted into the reactive site in the second ligand-exchange; and
repeating the thin film forming and the plasma processing steps until a thin film having a predetermined thickness is formed on the surface of the substrate.
2. The method of claim 1 , wherein the ligand-exchange reaction in each of the step of supplying the second reactant and the step of supplying a plasma-excited third reactant includes carrying out a ligand removing reaction in which the ligand existing at the surface of the substrate is removed to form the reactive site.
3. The method of claim 1 , wherein a ligand-exchange reaction is carried out between the reactive site generated as a result of the exchange reaction in the step of supplying the plasma-excited third reactant and the ligand of the first reactant supplied in a subsequent first step.
4. The method of claim 1 wherein the plasma-excited third reactant is an oxygen atom-containing gas.
5. The method of claim 4 , wherein the first reactant is a gas including aluminum, the second reactant is ozone gas, the plasma-excited third reactant is an oxygen plasma gas, and the thin film to be formed is an aluminum oxide thin film.
6. The method of claim 1 , wherein the plasma-excited third reactant is a gas including nitrogen atom.
7. The method of claim 6 , wherein the first reactant is a gas including silicon, the second reactant is a gas including nitrogen, the thin film to be formed is a silicon nitride thin film, and the plasma processing is carried out between the supplying of the first reactant and the supplying of the second reactant.
8. The method of claim 1 , wherein the first reactant is a gas including silicon, the second reactant is a gas including nitrogen, the plasma-excited third reactant is a gas including plasma-excited nitrogen, and the thin film to be formed is a silicon nitride thin film.
9. The method of claim 8 , wherein the plasma-excited third reactant includes plasma-excited nitrogen gas and plasma-excited ammonia gas.
10. The method of claim 9 , wherein the plasma-excited third reactant includes a gas obtained by plasma-exciting a gas mixture in which nitrogen gas and ammonia gas are mixed at a ratio of 1:1 to 6:1.
11. The method of claim 9 , wherein the plasma processing is carried out under a pressure of 0.5 Torr or lower.
12. The method of claim 1 , wherein in the thin film forming, a thin film of two to five atomic layers is formed.