TFT array panel and fabricating method thereof
Disclosed is display part such as a TFT array panel comprising an aluminum layer, and a molybdenum layer formed on the aluminum layer. The thickness of the molybdenum layer may be about 10% to about 40% the thickness of the aluminum layer. As a result, a top surface of the aluminum layer may have a width about equal to a bottom surface of the molybdenum layer. Accordingly, it is an aspect of the present invention to provide a TFT array panel comprising an aluminum wiring on which aluminum protrusion is reduced or eliminated.
1. A method of fabricating a TFT array panel, comprising:
depositing an aluminum layer having a first thickness directly on a substrate;
depositing a top molybdenum layer on the aluminum layer, the top molybdenum layer having a second thickness about 20% to about 27% the first thickness;
forming a wiring by patterning the aluminum layer and the top molybdenum layer and
forming an insulating layer, a semiconductor layer, and an ohmic contact layer in sequence on the wiring,
wherein the aluminum layer has a standard reduction potential of −1.76V, and the top molybdenum layer has a standard reduction potential of −0.2V and further wherein the aluminum layer has a taper shape, and
wherein the forming an insulating layer, a semiconductor layer, and an ohmic contact layer in sequence further comprises forming at least one of the insulating layer, the semiconductor layer, and the ohmic contact layer using a plasma-enhanced chemical vapor deposition process.
2. The method according to claim 1 , wherein the top molybdenum layer has a taper shape.
3. The method according to claim 1 , wherein the thickness of the top molybdenum layer is between about 200 and about 1500 Å.