IP Library › Granted Patent US 7,932,112
Granted Patent B2
US 7,932,112 · App. 12/421,280 · Granted Apr 26, 2011

Method for manufacturing light-emitting device

Assignee: Semiconductor Energy laboratory Co., Ltd.
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Quick Facts
Patent No.
US 7,932,112
App. No.
12/421,280
Granted
Apr 26, 2011
Kind
B2
Abstract

The deposition substrate of the present invention includes a light-transmitting substrate having a first region and a second region. In the first region, a first heat-insulating layer transmitting light is provided over the light-transmitting substrate, a light absorption layer is provided over the first heat-insulating layer, and a first organic compound-containing layer is provided over the light absorption layer. In the second region, a reflective layer is provided over the light-transmitting substrate, a second heat-insulating layer is provided over the reflective layer, and a second organic compound-containing layer is provided over the second heat-insulating layer. The edge of the second heat-insulating layer is placed inside the edge of the reflective layer, and there is a space between the first heat-insulating layer and the second heat-insulating layer.

Claims (23)

1. A method for manufacturing a light-emitting device, comprising:

disposing a first substrate and a second substrate having a first electrode so that the first substrate faces the first electrode, the first substrate including a first region and a second region and being capable of transmitting light;

the first region including:

a first heat-insulating layer provided over the first substrate, the first heat-insulating layer being capable of transmitting the light;

a light absorption layer provided over the first heat-insulating layer, the light absorption layer being capable of absorbing the light, and

a first organic compound-containing layer provided over the light absorption layer;

the second region including:

a reflective layer provided over the first substrate, the reflective layer being capable of reflecting the light;

a second heat-insulating layer provided over the reflective layer, and

a second organic compound-containing layer provided over the second heat-insulating layer,

wherein an edge of the second heat-insulating layer is placed inside an edge of the reflective layer, and

wherein a space is provided between the first heat-insulating layer and the second heat-insulating layer,

irradiating the light absorption layer with the light through the first substrate and the first heat-insulating layer to evaporate the first organic compound-containing layer, thereby forming a light-emitting layer on the first electrode; and

forming a second electrode layer on the light-emitting layer.

2. The method for manufacturing a light-emitting device according to claim 1 ,

wherein heat is conducted from the light absorption layer to the first organic compound-containing layer.

3. The method for manufacturing a light-emitting device according to claim 1 ,

wherein, after irradiation with the light, the second organic compound-containing layer remains over the second heat-insulating layer.

4. The method for manufacturing a light-emitting device according to claim 1 ,

wherein the first heat-insulating layer prevents heat from being conducted from the light absorption layer to the second region, and

wherein the second heat-insulating layer prevents heat from being conducted from the reflective layer to the second organic compound-containing layer.

5. The method for manufacturing a light-emitting device, according to claim 1 , wherein the light absorption layer is irradiated with the light under reduced pressure.

6. The method for manufacturing a light-emitting device, according to claim 1 , wherein lamp light or laser light is used as the light.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 9, 2009
From: YOKOYAMA, KOHEI; IKEDA, HISAO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 022527/0394 →
Priority Claims (1)
JP 2008-104906 · Apr 14, 2008 · national
Continuity (1)
Related Publication 20090256169A1 · Oct 15, 2009