Light emitting diode device and manufacturing method thereof

1. An LED device, comprising:

at least one LED;

a first porous material layer, disposed on the LED, the porous material layer having a plurality of first pores;

a plurality of first nanocrystals, disposed in the first pores, wherein a grain size of each of the first nanocrystals is smaller than an aperture of each of the first pores;

at least one first transparent material layer, disposed between the LED and the first porous material layer; and

at least one second transparent material layer, disposed between the first transparent material layer and the first porous material layer, where a refractive index of the second transparent material layer is smaller than the refractive index of the first transparent material.

2. The LED device of claim 1 , wherein each of the first pores is pillar-shaped.

3. The LED device of claim 2 , wherein the first pores are parallel to a surface of the LED.

4. The LED device of claim 3 , wherein a vertical cross-section of the first pores is a formation selected from a triangular formation, a quadrangle formation and a polygon formation.

5. The LED device of claim 1 , wherein the aperture of each of the first pores is smaller than 200 nanometers.

6. The LED device of claim 1 , further comprising at least one second phosphor layer, the second phosphor layer comprising a second porous material layer with a plurality of second pores and a plurality of second nanocrystals disposed in the second pores.

7. The LED device of claim 6 , wherein the aperture of each of the second pores is different from the aperture of each of the first pores.

8. The LED device of claim 6 , wherein the material of the first nanocrystals is different from the material of the second nanocrystals.