Integrated circuit system with a floating dielectric region and method of manufacture thereof
View Patent ↗A method of manufacture of an integrated circuit system includes: providing a second layer between a first layer and a third layer; forming an active device over the third layer; forming the third layer to form an island region underneath the active device; forming the second layer to form a floating second layer with an undercut beneath the island region; and depositing a fourth layer around the island region and the floating second layer.
1. An integrated circuit system comprising:
a substrate including a first layer;
a floating second layer with an undercut over the first layer;
an island region over the floating second layer;
an active device over the island region; and
a fourth layer around the island region and the floating second layer.
2. The system as claimed in claim 1 wherein:
the first layer and the island region include a semiconducting material.
3. The system as claimed in claim 1 wherein:
the first layer and the island region include a silicon material.
4. The system as claimed in claim 1 wherein:
the island region is on the floating second layer.
5. The system as claimed in claim 1 wherein:
the fourth layer includes an epitaxial material.
6. The system as claimed in claim 1 wherein:
the floating second layer includes an insulating material.
7. The system as claimed in claim 1 wherein:
the active device includes an MEET device, a PITT device, or a CMOS device.
8. The system as claimed in claim 1 wherein:
the fourth layer includes silicon-germanium or silicon.
9. The system as claimed in claim 1 wherein:
the floating second layer is on the first layer.
10. The system as claimed in claim 1 wherein:
the floating second layer alters self-heating of the active device.