Semiconductor device
View Patent ↗Disclosed is a semiconductor device which includes a semiconductor chip and a base substrate. The semiconductor chip includes a semiconductor substrate, an interconnect layer and a high-frequency interconnect. The interconnect layer is provided on the substrate. The high-frequency interconnect is formed within the interconnect layer. The semiconductor chip is mounted onto the base substrate. An electromagnetic shield layer is provided between the high-frequency interconnect and the interconnect.
1. A semiconductor device comprising:
a first substrate having an interconnect;
a second substrate provided over said first substrate and having an interconnect layer provided thereon, said interconnect layer including a high-frequency interconnect; and
an electromagnetic shield layer provided between said high-frequency interconnect and said interconnect of said first substrate.
2. The semiconductor device as set forth in claim 1 , wherein said high-frequency interconnect is an interconnect which is capable of being applied with an electric current having a frequency equal to or greater than 5 GHz.
3. The semiconductor device as set forth in claim 1 , wherein said high-frequency interconnect functions as an inductor.
4. The semiconductor device as set forth in claim 1 , wherein said electromagnetic shield layer is provided only between said high-frequency interconnect and said interconnect of said first substrate.
5. The semiconductor device as set forth in claim 1 , wherein:
said second substrate has a first electroconductive pad provided over said interconnect layer; and
said electromagnetic shield layer is disposed at a same layer level as said first electroconductive pad.
6. The semiconductor device as set forth in claim 5 , wherein said electromagnetic shield layer is formed of a same material as said first electroconductive pad.
7. The semiconductor device as set forth in claim 1 , wherein:
said first substrate has a surface on which a second electroconductive pad is provided to face said second substrate; and
said electromagnetic shield layer is disposed at a same layer level as said second electroconductive pad.
8. The semiconductor device as set forth in claim 1 , wherein said electromagnetic shield layer is formed within said interconnect layer of said first substrate.