Light emitting device and method for manufacturing the same

1. A light emitting device comprising:

a first electrode layer;

an ohmic layer on the first electrode layer;

a first conductivity-type semiconductor layer on the first electrode layer;

a current blocking layer in contact with the first conductivity-type semiconductor layer, the current blocking layer comprising an oxide of the first conductive-type semiconductor layer;

an active layer on the first conductivity-type semiconductor layer;

a second conductivity-type semiconductor layer on the active layer; and

a second electrode layer on the second conductivity-type semiconductor layer.

2. The light emitting device according to claim 1 , wherein at least portions of the first electrode layer, the second electrode layer, and the current blocking layer are aligned in a vertical direction.

3. The light emitting device according to claim 1 , wherein a top surface and a side surface of the current blocking layer are in contact with the first conductivity-type semiconductor layer, and a bottom surface of the current blocking layer is disposed to face the first electrode layer.

4. The light emitting device according to claim 1 , wherein the current blocking layer is provided in plurality and spaced apart from one another.

5. The light emitting device according to claim 1 , wherein the ohmic layer is between the first electrode layer and the current blocking layer.

6. The light emitting device according to claim 1 , wherein the current blocking layer is provided in plurality and at least two current blocking layers have different sizes.

7. The light emitting device according to claim 1 , wherein the second conductivity-type semiconductor layer comprises a first nitride layer and a second nitride layer, and the first nitride layer has a smaller refractive index than the second nitride layer.

8. The light emitting device according to claim 7 , wherein the first nitride layer comprises an AlGaN layer or an AlN layer and the second nitride layer comprises a GaN layer.

9. The light emitting device according to claim 1 , wherein the current blocking layer is formed of Ga x O y .

10. The light emitting device according to claim 1 , wherein the second conductivity-type semiconductor layer includes a semiconductor layer doped with n-type impurity ions and the first conductivity-type semiconductor layer includes a semiconductor layer doped with p-type impurity ions.

11. The light emitting device according to claim 1 , wherein a first portion of the second electrode layer disposed on a peripheral region of an upper surface of the second conductivity-type semiconductor is wider than a second portion of the second electrode layer disposed on a central region of an upper surface of the second conductivity-type semiconductor layer.

12. The light emitting device according to claim 1 , wherein a first portion of the current blocking layer disposed on a peripheral region of a bottom surface of the first conductivity-type semiconductor layer is wider than a second portion of the current blocking layer disposed on a central region of a bottom surface of the first conductivity-type semiconductor layer.