Thermoelectric material including a multiple transition metal-doped type I clathrate crystal structure
A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula A 8 TM y 1 1 TM y 2 2 . . . TM y n n M z X 46-y 1 -y 2 - . . . -y n -z . In the formula, A is selected from the group consisting of barium, strontium, and europium; X is selected from the group consisting of silicon, germanium, and tin; M is selected from the group consisting of aluminum, gallium, and indium; TM 1 , TM 2 , and TM n are independently selected from the group consisting of 3d, 4d, and 5d transition metals; and y 1 , y 2 , y n and Z are actual compositions of TM 1 , TM 2 , TM n , and M, respectively. The actual compositions are based upon nominal compositions derived from the following equation: z=8·q A −|Δq 1 |y 1 −|Δq 2 |y 2 − . . . −|Δq n |y n , wherein q A is a charge state of A, and wherein Δq 1 , Δq 2 , Δq n are, respectively, the nominal charge state of the first, second, and n-th TM.
1. A thermoelectric material comprising a multiple transition metal-doped type I clathrate crystal structure having the formula A 8 TM y 1 1 TM y n n M z X 46-y 1 -y n -z , wherein:
A is selected from the group consisting of barium, strontium, and europium;
X is selected from the group consisting of silicon, germanium, and tin;
M is selected from the group consisting of aluminum, gallium, and indium;
TM 1 is selected from the group consisting of 3d, 4d, and 5d transition metals;
TM n is one or more transition metals selected from the group consisting of 3d, 4d, and 5d transition metals; and
y 1 , y n and Z are actual compositions of TM 1 , TM n , and M, respectively, wherein the actual compositions are based upon nominal compositions derived from the following equation: z=8·q A −|Δq 1 |y 1 −|Δq n |y n , wherein q A is a charge state of A, and wherein Δq 1 and Δq n are, respectively, the nominal charge state of the first and n-th TM.
2. The thermoelectric material as defined in claim 1 wherein TM 1 is nickel.
3. The thermoelectric material as defined in claim 1 wherein TM n is zinc.
4. The thermoelectric material as defined in claim 1 wherein the thermoelectric material has an average thermoelectric figure of merit, ZT, of up to about 2.0 at a temperature ranging from about 500K to about 1000K.
5. The thermoelectric material as defined in claim 4 wherein TM 1 and TM n alter at least one of i) a band gap of the type I clathrate crystal structure, or ii) a charge distribution of the type I clathrate crystal structure to achieve the thermoelectric figure of merit, ZT, of up to about 2.0 at a temperature ranging from about 500K to about 1000K.
6. The thermoelectric material as defined in claim 5 wherein the band gap ranges from about 0.1 eV to about 0.5 eV.
7. The thermoelectric material as defined in claim 1 wherein the type I clathrate structure has enhanced ionized impurity scattering as additional TM elements are added to the structure.
8. The thermoelectric material as defined in claim 1 wherein the type I clathrate structure has the formula Ba 8 Ni 0.31 Zn 0.52 Ga 13.06 Ge 32.2 .
9. The thermoelectric material as defined in claim 8 wherein the type I clathrate structure having the formula Ba 8 Ni 0.31 Zn 0.52 Ga 13.06 Ge 32.2 has a thermoelectric figure of merit, ZT, of about 1.2.
10. The thermoelectric material as defined in claim 1 wherein the actual compositions are different than the nominal compositions due to at least one of vacancies or defects in the type I clathrate crystal structure.
11. A thermoelectric device, comprising:
a substrate; and
a material established on the substrate, the material including a multiple transition metal-doped type I clathrate crystal structure having the formula A 8 TM y 1 1 TM y n n M z X 46-y 1 -y n -z , wherein:
X is selected from the group consisting of silicon, germanium, and tin;
M is selected from the group consisting of aluminum, gallium, and indium;
TM 1 is selected from the group consisting of 3d, 4d, and 5d transition metals;
TM n is one or more transition metals selected from the group consisting of 3d, 4d, and 5d transition metals; and
y 1 , y n and Z are actual compositions of TM 1 , TM n , and M, respectively, wherein the actual compositions are based upon nominal compositions derived from the following equation: z=8·q A −|Δq 1 |y 1 −|Δq n |y n , wherein q A is a charge state of A, and wherein Δq 1 and Δq n are, respectively, the nominal charge state of the first, and n-th TM.
12. The thermoelectric device as defined in claim 11 wherein the type I clathrate structure has the formula Ba 8 Ni 0.31 Zn 0.52 Ga 13.06 Ge 32.2 .
13. The thermoelectric device as defined in claim 12 wherein the type I clathrate structure having the formula Ba 8 Ni 0.31 Zn 0.52 Ga 13.06 Ge 32.2 has a thermoelectric figure of merit, ZT, of about 1.2.
14. The thermoelectric device as defined in claim 11 wherein TM 1 and TM n alter at least one of i) a band gap of the type I clathrate crystal structure, or ii) a charge distribution of the type I clathrate crystal structure.
15. The thermoelectric device as defined in claim 14 wherein the type I clathrate structure achieves a thermoelectric figure of merit, ZT, of up to about 2.0 at a temperature ranging from about 500K to about 1000K.
16. The thermoelectric device as defined in claim 14 wherein the band gap ranges from about 0.1 eV to about 0.5 eV.
17. The thermoelectric device as defined in claim 11 wherein the type I clathrate structure has enhanced ionized impurity scattering as additional TM elements are added to the structure.
18. The thermoelectric device as defined in claim 11 wherein the device is a power generator.
19. A method for designing a thermoelectric material, comprising:
determining compositions y 1 , y n and Z for each variable component TM 1 , TM n , and M, of a multiple transition metal-doped type I clathrate crystal structure having the formula A 8 TM y 1 1 TM y n n M z X 46-y 1 -y n -z , wherein: A is selected from the group consisting of barium, strontium, and europium; M is selected from the group consisting of aluminum, gallium, and indium; X is selected from the group consisting of silicon, germanium, and tin; TM 1 is selected from the group consisting of 3d, 4d, and 5d transition metals; and TM n is one or more transition metal selected from the group consisting of 3d, 4d, and 5d transition metals; the determining of the compositions y 1 , y n and Z being based upon the formula z=8·q A −|Δq 1 |y 1 −|Δq n |y n , wherein q A is a charge state of A, and wherein Δq 1 and Δq n are, respectively, the nominal charge state of the first and n-th TM;
from the determining, generating a nominal composition for the multiple transition metal-doped type I clathrate crystal structure; and
preparing the transition metal-doped type I clathrate crystal structure according to the nominal composition.
20. The method as defined in claim 19 , further comprising determining, via electron probe microanalysis, an actual composition of the prepared transition metal-doped type I clathrate crystal structure.