Semiconductor device
A semiconductor device includes a semiconductor substrate including a semiconductor layer, a power device formed in the semiconductor substrate, a plurality of concentric guard rings formed in the semiconductor substrate and surrounding the power device, and voltage applying means for applying successively higher voltages respectively to the plurality of concentric guard rings, with the outermost concentric guard ring having the highest voltage applied thereto.
1. A semiconductor device comprising:
a semiconductor substrate including a semiconductor layer;
a power device formed in said semiconductor substrate;
a plurality of concentric guard rings formed in said semiconductor substrate and surrounding said power device; and
voltage applying means for applying successively higher voltages respectively to said plurality of concentric guard rings, with the outermost concentric guard ring having the highest voltage applied thereto, wherein:
said power device includes a grounded emitter electrode formed on a top surface of said semiconductor substrate, a gate electrode formed in said top surface of said semiconductor substrate, and a collector electrode formed on a bottom surface of said semiconductor substrate, said bottom surface being opposite said top surface;
said voltage applying means includes a plurality of series-connected resistance elements connected between said semiconductor layer and said emitter electrode; and
said plurality of concentric guard rings are connected to different successive ones of said plurality of series-connected resistance elements, with the outermost concentric guard ring being connected to the one of said successive series-connected resistance elements closest to said semiconductor layer.
2. The semiconductor device as claimed in claim 1 , wherein each of said plurality of concentric guard rings is connected to a respective one of said plurality of series-connected resistance elements by a capacitor.
3. The semiconductor device as claimed in claim 1 , wherein said plurality of series-connected resistance elements are connected to a peripheral portion of said semiconductor layer outside of said plurality of concentric guard rings.
4. The semiconductor device as claimed in claim 3 , wherein said plurality of series-connected resistance elements are made of polysilicon and together form a spiral extending over said plurality of concentric guard rings.
5. The semiconductor device as claimed in claim 3 , wherein said plurality of series-connected resistance elements are made of polysilicon and together form a straight line extending over said plurality of concentric guard rings.
6. The semiconductor device as claimed in claim 3 , wherein said plurality of series-connected resistance elements are made of polysilicon and together form a zigzag line extending over said plurality of concentric guard rings.
7. The semiconductor device as claimed in claim 1 , wherein said plurality of series-connected resistance elements include a plurality of series-connected diodes connected at a cathode thereof to said semiconductor layer and at an anode thereof to said emitter electrode.