Electrostatic discharge protection circuit
An ESD protection circuit includes a first voltage clamp, connected between a first voltage supply node and a second voltage supply node of the circuit, and a second voltage clamp, connected between the second voltage supply node and a voltage return of the circuit. The first voltage supply node is adapted to receive a first voltage which is greater than a prescribed gate oxide reliability potential of the circuit. The second voltage supply node is operative to receive a second voltage which is less than the first voltage. The first voltage clamp is operative to clamp the first voltage on the first voltage supply node to a first value during an ESD event between the first and second voltage supply nodes, and the second voltage clamp is operative to clamp the second voltage on the second voltage supply node to a second value during an ESD event between the second voltage supply node and the voltage return.
1. An electrostatic discharge (ESD) protection circuit, comprising:
a first voltage clamp connected between a first voltage supply node and a second voltage supply node of the circuit, the first voltage supply node being adapted to receive a first voltage which is greater than a prescribed gate oxide reliability potential of the circuit, the second voltage supply node being operative to receive a second voltage which is less than the first voltage; and
a second voltage clamp connected between the second voltage supply node and a voltage return of the circuit;
wherein the first voltage clamp is operative independently of the second voltage clamp to clamp the first voltage on the first voltage supply node to a first value during an ESD event between the first and second voltage supply nodes, and the second voltage clamp is operative independently of the first voltage clamp to clamp the second voltage on the second voltage supply node to a second value during an ESD event between the second voltage supply node and the voltage return.
2. The ESD protection circuit of claim 1 , wherein the first voltage clamp comprises:
a trigger circuit operative to detect the ESD event between the first and second voltage supply nodes and to generate a first control signal indicative of the ESD event; and
an ESD protection structure connected to the trigger circuit, the ESD protection structure being operative to form a current discharge path between the first and second voltage supply nodes in response to the first control signal.
3. The ESD protection circuit of claim 2 , wherein the trigger circuit comprises a timing circuit operative to detect an ESD transition between the first and second voltage supply nodes and to control an amount of time the ESD protection circuit remains active after detecting the ESD transition.
4. The ESD protection circuit of claim 3 , wherein the timing circuit comprises a resistor-capacitor (RC) circuit including a resistive element and a capacitive element connected together in series between the first and second voltage supply nodes, the amount of time the ESD protection circuit remains active after detecting the ESD transition being a function of values of the resistive and capacitive elements.
5. The ESD protection circuit of claim 3 , wherein the trigger circuit further comprises:
at least a first inverter having an input connected to the timing circuit; and
an output stage having an input connected to an output of the first inverter and an output for generating the first control signal.
6. The ESD protection circuit of claim 5 , wherein the output stage comprises an inverter, a ratio of a size of the inverter in the output stage to a size of the first inverter being selected so as to reduce a propagation delay in the first trigger circuit.
7. The ESD protection circuit of claim 5 , wherein the trigger circuit further comprises a resistive element connected between an output of the first inverter and one of the first voltage supply node and the voltage return, the resistive element being operative to set a potential at the input of the output stage to a prescribed voltage when the potential at the first voltage supply node is zero.
8. The ESD protection circuit of claim 5 , wherein the trigger circuit further comprises an NMOS transistor device having a first source/drain connected to the first voltage supply node, a second source/drain connected to the output of the first inverter, and a gate connected to the second voltage supply node.
9. The ESD protection circuit of claim 2 , wherein the ESD protection structure comprises an NMOS transistor device having a first source/drain connected to the first voltage supply node, a second source/drain connected to the second voltage supply node, and a gate for receiving the first control signal.
10. The ESD protection circuit of claim 1 , further comprising:
a first diode having a cathode connected to the first voltage supply node and an anode connected to the voltage return of the circuit; and
a second diode having a cathode connected to the second voltage supply node and an anode connected to the voltage return of the circuit.
11. The ESD protection circuit of claim 1 , wherein the first voltage clamp comprises at least one metal-oxide semiconductor (MOS) transistor device having a first threshold voltage associated therewith, and the second voltage clamp comprises at least one MOS transistor device having a second threshold voltage associated therewith, the first threshold voltage being greater than the second threshold voltage.
12. The ESD protection circuit of claim 1 , wherein the second voltage clamp comprises:
a trigger circuit operative to detect the ESD event between the second voltage supply node and the voltage return and to generate a second control signal in response thereto; and
an ESD protection structure connected to the trigger circuit, the ESD protection structure being operative to form a current discharge path between the second voltage supply node and the voltage return in response to the second control signal.
13. The ESD protection circuit of claim 12 , wherein the trigger circuit comprises a timing circuit operative to detect an ESD transition between the second voltage supply node and the voltage return and to control an amount of time the ESD protection circuit remains active after detecting the ESD transition.
14. The ESD protection circuit of claim 12 , wherein the trigger circuit further comprises:
at least a first inverter having an input connected to the timing circuit; and
an output stage having an input connected to an output of the first inverter and an output for generating the second control signal.
15. The ESD protection circuit of claim 14 , wherein the trigger circuit further comprises a resistive element connected between an output of the first inverter and one of the first voltage supply node and the voltage return, the resistive element being operative to set a potential at the input of the output stage to a prescribed voltage when the potential at the first voltage supply node is zero.
16. The ESD protection circuit of claim 12 , wherein the ESD protection structure comprises an NMOS transistor device having a first source/drain connected to the second voltage supply node, a second source/drain connected to the voltage return, and a gate for receiving the second control signal.
17. A method for protecting a circuit from electrostatic discharge (ESD), the circuit comprising a first voltage supply node, a second voltage supply node and a voltage return, the first voltage supply node being adapted to receive a first voltage which is greater than a prescribed gate oxide reliability potential of the circuit, the second voltage supply node being operative to receive a second voltage which is less than the first voltage, the method comprising the steps of:
clamping the first voltage on the first voltage supply node to a first value during an ESD event between the first and second voltage supply nodes; and
clamping the second voltage on the second voltage supply node to a second value during an ESD event between the second voltage supply node and the voltage return;
wherein the clamping of the first voltage is independent of the clamping of the second voltage.
18. The method of claim 17 , further comprising the steps of:
detecting the ESD event between the first and second voltage supply nodes;
generating a control signal indicative of the ESD event between the first and second voltage supply nodes; and
forming a current discharge path between the first and second voltage supply nodes in response to the control signal.
19. The method of claim 17 , further comprising the steps of:
detecting the ESD event between the second voltage supply node and the voltage return;
generating a control signal indicative of the ESD event between the second voltage supply node and the voltage return; and
forming a current discharge path between the second voltage supply node and the voltage return in response to the control signal.
20. An integrated circuit including at least one electrostatic discharge (ESD) protection circuit, the at least one ESD protection circuit comprising:
a first voltage clamp connected between a first voltage supply node and a second voltage supply node of the circuit, the first voltage supply node being adapted to receive a first voltage which is greater than a prescribed gate oxide reliability potential of the circuit, the second voltage supply node being operative to receive a second voltage which is less than the first voltage; and
a second voltage clamp connected between the second voltage supply node and a voltage return of the circuit;
wherein the first voltage clamp is operative independently of the second voltage clamp to clamp the first voltage on the first voltage supply node to a first value during an ESD event between the first and second voltage supply nodes, and the second voltage clamp is operative independently of the first voltage clamp to clamp the second voltage on the second voltage supply node to a second value during an ESD event between the second voltage supply node and the voltage return.