GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE AND PROCESS FOR ITS PRODUCTION
It is an object of the present invention to provide a gallium nitride-based compound semiconductor light emitting device with high light emission output and low driving voltage. The gallium nitride-based compound semiconductor light emitting device of the present invention is a gallium nitride-based compound semiconductor light emitting device characterized by comprising an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer, composed of gallium nitride-based compound semiconductors, stacked in that order on a substrate, with a negative electrode and positive electrode provided on the n-type semiconductor layer and p-type semiconductor layer, respectively, the positive electrode being composed of a conductive transparent oxide material, wherein a layer containing a compound with a Ga—O bond and/or an N—O bond is present between the p-type semiconductor layer and positive electrode.
1 . A gallium nitride-based compound semiconductor light emitting device comprising an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer, composed of gallium nitride-based compound semiconductors, in that order on a substrate, the n-type semiconductor layer and p-type semiconductor layer being provided with an negative electrode and positive electrode, respectively, and the positive electrode being composed of a conductive and transparent oxide material, the light emitting device being characterized in that a layer containing a compound with a Ga—O bond and/or an N—O bond is situated between the p-type semiconductor layer and the positive electrode.
2 . A gallium nitride-based compound semiconductor light emitting device according to claim 1 , wherein the oxide material is at least one type selected from the group consisting of ITO, IZO, AZO and ZnO.
3 . A process for production of a gallium nitride-based compound semiconductor light emitting device wherein a gallium nitride-based compound semiconductor light emitting device is produced by forming an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer, composed of gallium nitride-based compound semiconductors, in that order on a substrate, and forming an negative electrode and positive electrode composed of a conductive and transparent oxide material, on the formed n-type semiconductor layer and p-type semiconductor layer, respectively, the process being characterized by comprising a step of producing a layer containing a compound with a Ga—O bond and/or an N—O bond on the surface of the p-type semiconductor layer, after the step of forming the positive electrode.
4 . A process for production of a gallium nitride-based compound semiconductor light emitting device according to claim 3 , wherein the step of producing a layer containing a compound with a Ga—O bond and/or an N—O bond on the surface of the p-type semiconductor layer is heat treatment at a temperature of 300° C. or higher.
5 . A process for production of a gallium nitride-based compound semiconductor light emitting device according to claim 4 , wherein the heat treatment is carried out in an oxygen-containing atmosphere.
6 . A process for production of a gallium nitride-based compound semiconductor light emitting device wherein a gallium nitride-based compound semiconductor light emitting device is produced by forming an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer, composed of gallium nitride-based compound semiconductors, in that order on a substrate, and forming an negative electrode and positive electrode composed of a conductive and transparent oxide material, on the formed n-type semiconductor layer and p-type semiconductor layer, respectively, the process being characterized by comprising a step of producing a layer containing a compound with a Ga—O bond and/or an N—O bond on the surface of the p-type semiconductor layer, after the step of forming the p-type semiconductor layer and before the step of forming the positive electrode.
7 . A process for production of a gallium nitride-based compound semiconductor light emitting device according to claim 6 , wherein the step of producing a layer containing a compound with a Ga—O bond and/or an N—O bond on the surface of the p-type semiconductor layer comprises heat treatment for at least 1 minute at a temperature of 700° C. or higher in an ammonia-free atmosphere, and exposure to an oxygen-containing atmosphere either during or after the heat treatment.
8 . A process for production of a gallium nitride-based compound semiconductor light emitting device according to claim 7 , wherein the heat treatment is carried out for at least 5 minutes.
9 . A process for production of a gallium nitride-based compound semiconductor light emitting device according to claim 6 , wherein the step of producing a layer containing a compound with a Ga—O bond and/or an N—O bond on the surface of the p-type semiconductor layer is a step of lowering the temperature after formation of the p-type semiconductor layer, where the carrier gas is composed of a gas other than hydrogen, the temperature is lowered in an atmosphere containing no introduced ammonia, and the step is followed by exposure to an oxygen-containing atmosphere.
10 . A lamp comprising a gallium nitride-based compound semiconductor light emitting device according to claim 1 .
11 . An electronic device incorporating a lamp according to claim 10 .
12 . A machine incorporating an electronic device according to claim 11 .