NON-VOLATILE MEMORY DEVICE
A non-volatile memory device and method of manufacturing a non-volatile micro-electromechanical memory cell. The method comprises the first step of depositing a first layer of sacrificial material on a substrate by use of Atomic Layer Deposition The second step of the method is providing a cantilever ( 101 ) over at least a portion of the first layer of sacrificial material. The third step is depositing, by use of Atomic Layer Deposition, a second layer of sacrificial material over the first layer of sacrificial material and over a portion of the cantilever such that a portion of the cantilever is surrounded by sacrificial material. The fourth step is providing a further layer material ( 107 ) which covers at least a portion of the second layer of sacrificial material. Finally, the last step is etching away the sacrificial material surrounding the cantilever, thereby defining a cavity ( 102 ) in which the cantilever is suspended.
1 . A method of manufacturing a non-volatile micro-electromechanical memory cell, the method comprising the steps of:
depositing a first layer of sacrificial material on a substrate by use of Atomic Layer Deposition;
providing a cantilever over at least a portion of the first layer of sacrificial material;
depositing, by use of Atomic Layer Deposition, a second layer of sacrificial material over the first layer of sacrificial material and over a portion of the cantilever such that a portion of the cantilever is surrounded by sacrificial material;
providing a further layer of material which covers at least a portion of the second layer of sacrificial material; and
etching away the sacrificial material surrounding the cantilever, thereby defining a cavity in which the cantilever is suspended.
2 . The method of claim 1 wherein the further layer of material is a layer of insulating material.
3 . The method of claim 1 wherein the further layer of material is a layer of conductive material.
4 . The method of claim 1 , wherein the cantilever is provided by use of Atomic Layer Deposition.
5 . The method of claim 1 , wherein the cantilever is provided by use of Chemical Vapour Deposition.
6 . The method of claim 1 , wherein the portions of sacrificial material deposited in the step of depositing a first layer of sacrificial material and the step of depositing a second layer of sacrificial material are portions which surround the free end of the cantilever.
7 . The method of claim 1 , wherein the sacrificial material is a carbon-based material.
8 . The method of claim 1 , wherein the further layer is provided by use of Atomic Layer Deposition.
9 . The method of claim 5 , wherein the step of providing a cantilever layer further comprises the step of:
coating at least one side of the cantilever layer with a conductive coating using Atomic Layer Deposition.
10 . A non-volatile micro-electromechanical memory cell comprising:
a cantilever;
a cavity in which the cantilever is suspended, a portion of the cavity being formed by the removal of sacrificial material deposited using Atomic Layer Deposition.
11 . The memory cell of claim 10 , wherein the cantilever was formed using Atomic Layer Deposition.
12 . The memory cell of claim 10 , wherein the portion of the cavity formed by the removal of sacrificial material deposited using Atomic Layer Deposition is a portion of the cavity which surrounds the free end of the cantilever.
13 . The memory cell of claim 10 , wherein the cantilever is coated in a conductive material using Atomic Layer Deposition.
14 . The method of claim 2 , wherein the cantilever is provided by use of Atomic Layer Deposition.
15 . The method of claim 3 , wherein the cantilever is provided by use of Atomic Layer Deposition.
16 . The method of claim 2 , wherein the cantilever is provided by use of Chemical Vapour Deposition.
17 . The method of claim 3 , wherein the cantilever is provided by use of Chemical Vapour Deposition.
18 . The method of claim 6 , wherein the step of providing a cantilever layer further comprises the step of:
coating at least one side of the cantilever layer with a conductive coating using Atomic Layer Deposition.
19 . The method of claim 7 , wherein the step of providing a cantilever layer further comprises the step of:
coating at least one side of the cantilever layer with a conductive coating using Atomic Layer Deposition.
20 . The method of claim 8 , wherein the step of providing a cantilever layer further comprises the step of:
coating at least one side of the cantilever layer with a conductive coating using Atomic Layer Deposition.