Method of manufacturing crystalline silicon solar cells with improved surface passivation
The present invention provides a method of manufacturing a crystalline silicon solar cell, comprising: —providing a crystalline silicon substrate having a front side and a back side; —forming a thin silicon oxide film on at least one of the front and the back side by soaking the crystalline silicon substrate in a chemical solution; —forming a dielectric coating film on the thin silicon oxide film on at least one of the front and the back side. The thin silicon oxide film may be formed with a thickness of 0.5-10 nm. By forming a oxide layer using a chemical solution, it is possible to form a thin oxide film for surface passivation wherein the relatively low temperature avoids deterioration of the semiconductor layers.
1. A method of manufacturing a crystalline silicon solar cell, comprising:
providing a crystalline silicon solar cell substrate having a front side and a back side, wherein said crystalline silicon solar cell substrate is an n-type substrate;
surface texturing said crystalline silicon solar cell substrate by chemically etching said crystalline silicon solar cell;
after said surface texturing, creating a p-type layer in said front side of said crystalline silicon solar cell substrate;
subsequently soaking the crystalline silicon solar cell substrate in a chemical solution for forming by oxidation of said crystalline silicon solar cell substrate a thin silicon oxide passivation film on at least one of said front and said back side; and
forming a dielectric coating film on said thin silicon oxide passivation film on at least one of said front and said back side, wherein said thin silicon oxide passivation film is formed by treatment of said crystalline silicon substrate in said chemical solution at a temperature under 150° C.;
wherein said thin silicon oxide passivation film is formed with a thickness of 0.5-10 nm.
2. The method according to claim 1 , wherein said temperature is room temperature.
3. The method according to claim 1 , wherein said chemical solution comprises at least one solution selected from the group consisting of:
A. a solution containing nitric acid,
B. a solution containing hydrogen peroxide,
C. a solution containing sulphuric acid,
D. a solution containing hydrochloric acid,
E. a solution containing ozone,
F. a solution containing acetic acid,
G. a solution containing boiling water,
H. a solution containing ammonium hydride.
4. The method according to claim 1 , wherein said dielectric coating film comprises silicon nitride including hydrogen, or amorphous silicon carbide including hydrogen.
5. The method according to claim 1 , wherein said dielectric coating film has a refraction index between 1.8-3.0.
6. The method according to claim 1 , wherein said dielectric coating film, at least in use, functions as an anti-reflection coating film.
7. The method according to claim 1 , wherein said dielectric coating film, at least in use, functions as an internal-reflection coating film.
8. A method of manufacturing a crystalline silicon solar cell, comprising:
providing a crystalline silicon solar cell substrate having a front side and a back side;
soaking the crystalline silicon solar cell substrate in a chemical solution for forming by oxidation, a thin silicon oxide passivation film on at least one of said front and said back side;
forming a dielectric coating film on said thin silicon oxide passivation film on at least one of said front and said back side, wherein said thin silicon oxide passivation film is formed by treatment of said crystalline silicon substrate in said chemical solution at a temperature under 150° C.;
wherein said thin silicon oxide passivation film is formed with a thickness of 0.5-10 nm;
wherein said dielectric coating film comprises hydrogen; and
annealing the crystalline silicon substrate after formation of said dielectric coating; and
allowing hydrogen from said dielectric coating to be emitted and to penetrate the thin oxide passivation film.
9. The method according to claim 8 , wherein said temperature is room temperature.
10. The method according to claim 8 , wherein said chemical solution comprises at least one solution selected from the group consisting of:
A. a solution containing nitric acid,
B. a solution containing hydrogen peroxide,
C. a solution containing sulphuric acid,
D. a solution containing hydrochloric acid,
E. a solution containing ozone,
F. a solution containing acetic acid,
G. a solution containing boiling water,
H. a solution containing ammonium hydride.
11. The method according to claim 8 , wherein said dielectric coating film comprises silicon nitride including hydrogen, or amorphous silicon carbide including hydrogen.
12. The method according to claim 8 , wherein an annealing temperature is more than 50° C. higher than a deposition temperature of said dielectric coating film.
13. The method according to claim 8 , wherein said dielectric coating film has a refraction index between 1.8-3.0.
14. The method according to claim 8 , wherein said dielectric coating film, at least in use, functions as an anti-reflection coating film.
15. The method according to claim 8 , wherein said dielectric coating film, at least in use, functions as an internal-reflection coating film.
16. The method according to claim 8 , comprising surface texturing of the crystalline silicon solar cell substrate by chemically etching said crystalline silicon solar cell before said soaking said crystalline silicon solar cell substrate in said chemical solution.
17. The method according to claim 16 , comprising after said surface texturing, creating a p-type layer in said front side of said crystalline silicon solar cell substrate, wherein said crystalline silicon solar cell substrate is a n-type substrate.