Speed binning for dynamic and adaptive power control
A representative digital circuit of the invention has an on-chip, non-volatile memory, to which chip-specific speed-binning data that characterize performance of the digital circuit are written during production testing. During normal operation, the power controller that controls power-supply signals applied to the digital circuit reads the speed-binning data from the on-chip memory for use as input parameters for dynamic supply-voltage scaling, dynamic clock scaling, and/or adaptive power control that optimize (e.g., minimize) power consumption in the digital circuit. Advantageously over the prior art, the accuracy and efficiency of dynamic and/or adaptive power control arc improved because the chip-specific speed-binning data enable the power controller to better customize the power-management algorithm for the given digital circuit.
1. A device, comprising:
a processor core configured to receive a first power-supply signal;
a digital circuit configured to receive a second power-supply signal different from the first power-supply signal;
a power controller adapted to control the first and second power-supply signals; and
a memory adapted to store speed-binning test data that characterize performance of said processor core and said digital circuit, wherein the power controller is adapted to access said speed-binning test data to set one or more levels of said first and second power-supply signals.
2. The device of claim 1 , wherein the power controller is adapted to use said speed-binning test data to customize at least one of adaptive power control and dynamic power control for said processor core and said digital circuit.
3. The device of claim 1 , wherein the speed-binning test data has been generated and stored in said memory during production testing of the device, said speed-binning enabling adjustment of the first and second power supply signals with an increment corresponding to an operational speed increment of about 6 MHz.
4. The device of claim 3 , wherein the speed-binning data comprise one or more supply voltages at which the digital circuit and the processor core have passed testing employing one or more respective speed-binning test vectors.
5. The device of claim 1 , wherein the memory is a one-time programmable fuse block.
6. The device of claim 1 , wherein the power controller is adapted to (i) determine a speed constraint for a task to be executed by the digital circuit and the processor core and (ii) specify one or more levels of said first power-supply signal for the execution of said task based on said speed constraint and said speed-binning test data.
7. The device of claim 1 , further comprising a sensor adapted to sense temperature of the processor core, wherein the power controller is adapted to specify one or more levels of said first power-supply signal based on a temperature reading obtained from said sensor.
8. The device of claim 1 , further comprising a power management unit adapted to:
receive instructions from the power controller regarding the one or more levels of said first and second power-supply signals; and
generate said first and second power-supply signals based on said instructions.
9. The device of claim 8 , wherein the power controller and the power management unit comply with a PowerWise™ Interface Specification.
10. The device of claim 8 , wherein:
the device is implemented using a chipset having first and second integrated circuits;
the memory, the power controller, the processor core, and the digital circuit are parts of the first integrated circuit; and
the power management unit is part of the second integrated circuit.
11. The device of claim 1 , wherein the digital circuit and the processor core are parts of a digital base-band circuit for cellular telephony.
12. The device of claim 1 , wherein:
the digital circuit comprises a phase-locked loop; and
the device is configured to apply the second power-supply signal to power said phase-locked loop.
13. The device of claim 12 , wherein:
the digital circuit further comprises a reference oscillator; and
the device is further configured to apply the second power-supply signal to power said reference oscillator.
14. A power-management method, comprising:
applying a first power-supply signal to a processor core;
applying a second power-supply signal to a digital circuit, said second power-supply signal being different from the first power-supply signal; and
reading speed-binning test data that characterize performance of said processor core and said digital circuit from a memory to set one or more levels of said first and second power-supply signals, wherein the processor core, the digital circuit, and the memory are parts of a single integrated circuit.
15. The method of claim 14 , further comprising:
customizing at least one of adaptive power control and dynamic power control for said processor core and said digital circuit using said speed-binning test data.
16. The method of claim 14 , wherein the speed-binning test data has been generated and stored in said memory during production testing of the integrated circuit.
17. The method of claim 16 , wherein the speed-binning test data comprise one or more supply voltages at which the integrated circuit has passed testing employing one or more respective speed-binning test vectors.
18. The method of claim 14 , further comprising:
determining a speed constraint for a task to be executed by the integrated circuit; and
specifying one or more levels of said first power-supply signal for the execution of said task based on said speed constraint and said speed-binning test data.
19. The method of claim 14 , further comprising:
sensing temperature of the processor core; and
specifying the one or more levels of said first power-supply signal based on the sensed temperature.
20. A method of testing an integrated circuit, comprising:
storing in a memory speed-binning test data that characterize performance of the integrated circuit, wherein the integrated circuit comprises:
a processor core configured to receive a first power-supply signal;
a digital circuit configured to receive a second power-supply signal different from the first power-supply signal;
the memory; and
a power controller adapted to:
control the first and second power-supply signals; and
access said speed-binning test data to set one or more levels of said first and second power-supply signals.
21. The method of claim 20 , further comprising:
selecting a speed-binning test vector;
setting the second power-supply signal to a first voltage level;
running the selected speed-binning test vector through the digital circuit at said set voltage level;
determining whether the digital circuit passed a test employing the selected speed-binning test vector at said set voltage level;
if the digital circuit passed said test, setting the selected power-supply signal to a next voltage level; and
repeating the steps of running, determining, and setting to a next voltage level to determine a minimum supply voltage at which the digital circuit is able to pass the test employing the selected speed-binning test vector.
22. The method of claim 20 , wherein the speed-binning test data comprise one or more supply voltages at which the digital circuit has passed testing employing one or more respective speed-binning test vectors.
23. Apparatus, comprising:
a digital processor configured to receive a first power-supply signal;
a digital circuit configured to receive a second power-supply signal, the second power supply signal being different from the first power-supply signal;
a power controller adapted to control the first and second power-supply signals;
a memory adapted to store speed-binning test data that characterize performance of said digital processor and said digital circuit, wherein the power controller is adapted to access said speed-binning test data to set at least one level of each of said first and second power-supply signals.