Organic transistor element, and method of manufacturing the same by concurrently doping an organic semiconductor layer and wet etching an electrode provided on the organic semiconductor layer
In a method for manufacturing an organic transistor element, an electrode is subjected to wet etching into a predetermined pattern on an organic semiconductor layer. In the process for performing wet etching on the electrode so as to obtain a predetermined pattern, an etching liquid containing a dopant of the organic semiconductor layer is used to perform wet etching on the electrode and, simultaneously, the organic semiconductor layer is doped with the dopant.
1. A method for manufacturing an organic transistor element having an electrode provided on an organic semiconductor layer comprising:
forming an organic semiconductor layer above an insulating layer;
performing wet etching of the electrode into a predetermined pattern, the electrode being provided on the organic semiconductor layer, the wet etching using an iodine etching solution; and
forming a doped region in the organic semiconductor layer from a surface layer of the organic semiconductor layer to a vicinity of an interface of the insulating layer, by doping the dopant into the organic semiconductor layer concurrently with the wet etching of the electrode being performed using the iodine etching solution that includes the dopant,
wherein the wet etching includes one of the following:
when the organic semiconductor layer has positive holes as carriers, the dopant in the iodine etching solution is an oxidizing dopant having oxidative capability, wherein the oxidizing dopant is selected from the group consisting of halogens, Lewis acids, proton acids, organic acids, transition metal compounds and electrolytic anions, and the wet etching of the electrode simultaneously oxidizes the organic semiconductor layer and forms more positive holes therein, and
when the organic semiconductor layer has electrons as carriers, the dopant in the iodine etching solution is a reducing dopant having reductive capability, wherein the reducing dopant is selected from the group consisting of alkali metals, alkaline earth metals, rare earth metals, ammonium ion, alkyl group including R 4 P + , R 4 As + ,R 3 S + and acetylcholine; and the wet etching of the electrode simultaneously reduces the organic semiconductor layer and forms more electrons therein.
2. A method for manufacturing an organic transistor element, comprising:
preparing a substrate having an auxiliary electrode and an insulating layer provided in this order;
providing an organic semiconductor layer on the insulating layer;
providing a first electrode layer on the organic semiconductor layer;
providing a charge injection suppressing layer with a predetermined dimension on the first electrode layer;
wet etching the first electrode layer using the charge injection suppressing layer as an etching mask to provide a first electrode having a predetermined pattern, the wet etching being carried out using an iodine etching solution containing a dopant;
providing a light emitting layer on the charge injection suppressing layer and the organic semiconductor layer; and
providing a second electrode on the light emitting layer,
wherein the wet etching forms a doped region in the organic semiconductor layer that extends from a surface layer of the organic semiconductor layer to a vicinity of an interface of the insulating layer, and the wet etching includes one of the following:
when the first electrode is structured as an anode, the dopant in the iodine etching solution is an oxidizing dopant having an oxidative property, the oxidizing dopant is selected from the group consisting of halogens, Lewis acids, proton acids, organic acids, transition metal compounds and electrolytic anions, and the wet etching of the first electrode layer to provide the first electrode simultaneously reduces the organic semiconductor layer and forms the doped region having more positive holes therein, and
when the first electrode is structured as a cathode, the dopant in the iodine etching solution is a reducing dopant having a reductive property, the reducing dopant is selected from alkali metals, alkaline earth metal, rare earth metals, ammonium ion, alkyl group including R 4 P + , R 4 As + ,R 3 S + , and acetylcholine; and the wet etching of the first electrode layer to provide the first electrode simultaneously reduces the organic semiconductor layer and forms the doped region with more electrons in the organic semiconductor layer.
3. The method for manufacturing the organic transistor element according to claim 1 , wherein the organic semiconductor layer is an organic layer including a charge injecting material, a charge transporting material, or a light emitting material.
4. The method for manufacturing the organic transistor element according to claim 1 , wherein the organic semiconductor layer is an organic layer including a charge injecting material, a charge transporting material, or a light emitting material.
5. The method for manufacturing the organic transistor element according to claim 1 , wherein
the oxidizing dopant is selected from the group consisting of the halogens including Cl 2 , Br 2 , I 2 , ICl, ICl 3 , IBr and IF; the Lewis acids including PF 5 , AsF 5 , SbF 5 , BF 3 , BCl 3 , BBr 3 and SO 3 ; the proton acids including HF, FCl, HNO 3 , H 2 SO 4 , HClO 4 , FSO 3 H, ClSO 3 H, and CF 3 SO 3 H; the organic acids including acetic acid, formic acid, and amino acid; the transition metal compounds including FeCl 3 , FeOCl, TiCl 4 , ZrCl 4 HfCl 4 , NbF 5 , NbCl 5 , TaCl 5 , MoCl 5 , WF 5 , WCl 6 , UF 6 and MCl 3 where M=La, Ce, Nd, Pr or Y; and the electrolytic anions including Cl—, Br—, PF 6 —, AsFs 5 -, SbF 6 —, BF 4 — and sulfonate anions: and
the reducing dopant is selected from the group consisting of the alkali metals including Li, Na, K, Rb and Cs; the alkaline earth metals including Ca, Sr and Ba; and the rare earth metals including of Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Yb.
6. The method for manufacturing the organic transistor element according to claim 2 , wherein
the oxidizing dopant is selected from the group consisting of the halogens including Cl 2 , Br 2 , I 2 , ICl, ICl 3 , IBr and IF; the Lewis acids including PF 5 , AsF 5 , SbF 5 , BF 3 , BCl 3 , BBr 3 and SO 3 ; the proton acids including HF, HCl, HNO 3 , H 2 SO 4 , HClO 4 , FSO 3 H, ClSO 3 H, and CF 3 SO 3 H; the organic acids including acetic acid, formic acid, and amino acid; the transition metal compounds including FeCl 3 , FeOCl, TiCl 4 , ZrCl 4 , HfCl 4 , NbF 5 , NbCl 5 , TaCl 5 , MoCl 5 , WF 5 , WCl 6 , UF 6 and MCl 3 where M=La, Ce, Nd, Pr or Y; and the electrolytic anions including Cl—, Br—, PF 6 —, AsFs 5 -, SbF 6 —, BF 4 — and sulfonate anions; and
the reducing dopant is selected from the group consisting of the alkali metals including Li, Na, K, Rb, and Cs; the alkaline earth metals including Ca, Sr, and Ba; and the rare earth metals including of Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, and Yb.
7. An organic transistor element made by the process of claim 1 .
8. An organic transistor element made by the process of claim 2 .
9. An organic light emitting transistor element having an organic transistor element made by the process of claim 1 .
10. An organic light emitting transistor element having an organic transistor element made by the process of claim 2 .
11. A light emitting display device having an organic transistor element made by the process of claim 1 .
12. A light emitting display device having an organic transistor element made by the process of claim 2 .