IP Library › Granted Patent US 7,879,633
Granted Patent B2
US 7,879,633 · App. 12/453,301 · Granted Feb 1, 2011

Miniature optical element for wireless bonding in an electronic instrument

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Quick Facts
Patent No.
US 7,879,633
App. No.
12/453,301
Granted
Feb 1, 2011
Kind
B2
Abstract

A method of manufacturing an optical element including the steps of: forming a through hole in a semiconductor element which has an optical section and an electrode electrically connected to the optical section; and forming a conductive layer extending from a first surface of the semiconductor element on which the optical section is formed, through an inner wall surface of the through hole, to a second surface opposite to the first surface.

Claims (59)

1. A method of manufacturing an optical element, comprising:

forming a through hole in a semiconductor wafer so that the through hole extends from a first surface of the semiconductor wafer to a second surface of the semiconductor wafer, the second surface of the semiconductor wafer being opposite to the first surface of the semiconductor, the first surface of the semiconductor wafer having an optical section, a first electrode being formed on the first surface of the semiconductor wafer;

forming a conductive layer on an internal wall of the through hole so that the conductive layer is electrically connected to the first electrode; and

forming a resin on the second surface of the semiconductor wafer;

wherein a first portion of the conductive layer is formed on the resin in the forming of the conductive layer.

2. The method of manufacturing an optical element as defined in claim 1 , further comprising:

forming a second electrode on the second surface of the semiconductor wafer so that the second electrode is electrically connected to the conductive layer.

3. The method of manufacturing an optical element as defined in claim 1 , further comprising:

forming a second electrode on the first portion of the conductive layer.

4. The method of manufacturing an optical element as defined in claim 1 , further comprising:

forming a light-transmitting member on the first surface of the semiconductor wafer.

5. The method of manufacturing an optical element as defined in claim 1 , further comprising:

forming a light-transmitting member on the first surface of the semiconductor wafer after the forming of the conductive layer.

6. The method of the manufacturing an optical element as defined in claim 4 , further comprising:

dicing the semiconductor wafer and the light-transmitting member together into individual chips.

7. The method of the manufacturing an optical element defined in claim 1 , further comprising:

forming an optical glass above the first surface of the semiconductor wafer.

8. The method of the manufacturing an optical element defined in claim 1 , further comprising:

forming a color filter on the first surface of the semiconductor wafer.

9. The method of the manufacturing an optical element defined in claim 1 , further comprising:

forming a microlens on the first surface of the semiconductor wafer.

10. A method of manufacturing an optical element, comprising:

forming a through hole in a semiconductor wafer so that the through hole extends from a first surface of the semiconductor wafer to a second surface of the semiconductor wafer, the second surface of the semiconductor wafer being opposite to the first surface of the semiconductor, the first surface of the semiconductor wafer having an optical section, a first electrode being formed on the first surface of the semiconductor wafer;

forming a conductive layer on an internal wall of the through hole so that the conductive layer is electrically connected to the first electrode; and

forming a hole in the first electrode before the forming of the through hole;

wherein the through hole is formed such that the through hole communicates with the hole in the first electrode during the forming of the thorough hole.

11. The method of manufacturing an optical element as defined in claim 10 , further comprising:

forming a second electrode on the second surface of the semiconductor wafer so that the second electrode is electrically connected to the conductive layer.

12. The method of manufacturing an optical element as defined in claim 10 , further comprising:

forming a light-transmitting member on the first surface of the semiconductor wafer.

13. The method of manufacturing an optical element as defined in claim 10 , further comprising:

forming a light-transmitting member on the first surface of the semiconductor wafer after the forming of the conductive layer.

14. The method of the manufacturing an optical element as defined in claim 12 , further comprising:

dicing the semiconductor wafer and the light-transmitting member together into individual chips.

15. The method of the manufacturing an optical element defined in claim 10 , further comprising:

forming an optical glass above the first surface of the semiconductor wafer.

16. The method of the manufacturing an optical element defined in claim 10 , further comprising:

forming a color filter on the first surface of the semiconductor wafer.

17. The method of the manufacturing an optical element defined in claim 10 , further comprising:

forming a microlens on the first surface of the semiconductor wafer.

18. A method of manufacturing an optical element, comprising:

forming a through hole in a semiconductor wafer so that the through hole extends from a first surface of the semiconductor wafer to a second surface of the semiconductor wafer, the second surface of the semiconductor wafer being opposite to the first surface of the semiconductor, the first surface of the semiconductor wafer having an optical section, a first electrode being formed on the first surface of the semiconductor wafer; and

forming a conductive layer on an internal wall of the through hole so that the conductive layer is electrically connected to the first electrode;

wherein the forming of the through hole includes forming a pore in the semiconductor wafer by using a laser, and enlarging the pore by etching an inner wall of the pore such that the through hole is formed in the semiconductor wafer.

19. The method of manufacturing an optical element as defined in claim 18 , further comprising:

forming a second electrode on the second surface of the semiconductor wafer so that the second electrode is electrically connected to the conductive layer.

20. The method of manufacturing an optical element as defined in claim 18 , further comprising:

forming a light-transmitting member on the first surface of the semiconductor wafer.

21. The method of manufacturing an optical element as defined in claim 18 , further comprising:

forming a light-transmitting member on the first surface of the semiconductor wafer after the forming of the conductive layer.

22. The method of the manufacturing an optical element as defined in claim 20 , further comprising:

dicing the semiconductor wafer and the light-transmitting member together into individual chips.

23. The method of the manufacturing an optical element defined in claim 18 , further comprising:

forming an optical glass above the first surface of the semiconductor wafer.

24. The method of the manufacturing an optical element defined in claim 18 , further comprising:

forming a color filter on the first surface of the semiconductor wafer.

25. The method of the manufacturing an optical element defined in claim 18 , further comprising:

forming a microlens on the first surface of the semiconductor wafer.

26. The method of the manufacturing an optical element defined in claim 18 , wherein a wet etching is applied in the enlarging of the pore.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 21, 2017
From: SEIKO EPSON CORPORATION
To: ADVANCED INTERCONNECT SYSTEMS LIMITED
Reel/Frame 044938/0869 →