Body to be plated, method of determining plated film thickness, and method of manufacturing semiconductor device
View Patent ↗A structure to be plated includes a body to be plated 11 on which plating is formed, and plated film thickness determining member 16 opposed to and electrically isolated from the body to be plated 11 through a slit portion 12 . The plated film thickness determining member 16 has an islands-shape and is conductive. It is possible to instantly determine whether or not the plating formed on the body to be plated 11 has been formed to a thickness larger than the width W of the slit portion 12 on the spot by determining whether or not plating has grown from the surface of the body to be plated 11 to the plated film thickness determining member 16 through the slit portion 21.
1. A method of determining a plated film thickness using a plated film thickness determining member opposed to and electrically isolated from a body to be plated on which plating is formed through a slit portion, the plated film thickness determining member having an islands-shape and being conductive,
the method of determining a plated film thickness comprising measuring a plated film thickness by determining whether or not plating deposited on a surface of the body to be plated has reached the plated film thickness determining member through the slit portion.
2. The method of determining a plated film thickness according to claim 1 , wherein whether or not the plating has reached the plated film thickness determining member through the slit portion is determined by determining a color of the plated film thickness determining member.
3. The method of determining a plated film thickness according to claim 1 , wherein whether or not the plating has reached the plated film thickness determining member through the slit portion is determined by measuring reflectivity of the plated film thickness determining member.
4. The method of determining a plated film thickness according to claim 1 , wherein the body to be plated is a lead frame.
5. A method of manufacturing a semiconductor device, comprising:
mounting a semiconductor chip and forming a slit portion in a lead frame, the semiconductor chip being sealed with insulating material;
applying exterior plating to the lead frame on which the semiconductor chip is mounted; and
inspecting a film thickness of the plating by determining whether or not plating is deposited on the slit portion.
6. The method of manufacturing a semiconductor device according to claim 5 , further comprising:
forming a slit portion so that a plated film thickness determining member is opposed to and electrically isolated from a lead frame on which plating is formed through the slit portion, the plated film thickness determining member having an islands-shape and being conductive, and
measuring a plated film thickness by determining whether or not plating deposited on a surface of the body to be plated has reached the plated film thickness determining member through the slit portion.
7. The method of manufacturing a semiconductor device according to claim 6 , wherein the plated film thickness determining member and the lead frame is connected by insulating material.
8. The method of manufacturing a semiconductor device according to claim 7 , wherein the insulating material connecting the plated film thickness determining member with the lead frame is formed by the same process as the insulating material sealing the semiconductor chip.
9. The method of manufacturing a semiconductor device according to claim 6 , wherein whether or not the plating has reached the plated film thickness determining member through the slit portion is determined by determining a color of the plated film thickness determining member.
10. The method of manufacturing a semiconductor device according to claim 6 , wherein whether or not the plating has reached the plated film thickness determining member through the slit portion is determined by measuring reflectivity of the plated film thickness determining member.