Semiconductor device

1. A semiconductor device, comprising:

a substrate;

an electric fuse comprising a lower-layer wiring formed over said substrate, a first via provided on said lower-layer wiring and connected to said lower-layer wiring, and an upper-layer wiring provided on said first via and connected to said first via, a flowing-out portion, said flowing-out portion comprising a conductive material comprising said electric fuse being formed in a cut-off state of said electric fuse; and

a heat diffusion portion comprising a heat diffusion wiring that is formed in a same layer as one of said upper-layer wiring and said lower-layer wiring and is placed on a side of said one of said upper-layer wiring and said lower-layer wiring, said heat diffusion portion being electrically connected to said one of said upper-layer wiring and said lower-layer wiring,

wherein said heat diffusion wiring is formed at least on a side of a point where said one of said upper-layer wiring and said lower-layer wiring is connected to said first via.

2. The semiconductor device as claimed in claim 1 , wherein said heat diffusion wiring is placed along with said one of said upper-layer wiring and said lower-layer wiring.

3. The semiconductor device as claimed in claim 1 , wherein said heat diffusion portion further includes a connection wiring that is formed in the same layer as said one of said upper-layer wiring and said lower-layer wiring, and connects said heat diffusion wiring to said one of said upper-layer wiring and said lower-layer wiring.

4. The semiconductor device as claimed in claim 3 , wherein said connection wiring is connected to said one of said upper-layer wiring and said lower-layer wiring at a point where said one of said upper-layer wiring and said lower-layer wiring is connected to said first via.

5. The semiconductor device as claimed in claim 3 , wherein a width of said connection wiring is greater than a width of said one of said upper-layer wiring and said lower-layer wiring.

6. The semiconductor device as claimed in claim 1 , wherein said heat diffusion wiring is formed on both sides of said one of said upper-layer wiring and said lower-layer wiring.

7. The semiconductor device as claimed in claim 1 , wherein said heat diffusion wiring is formed on a side of each of said upper-layer wiring and said lower-layer.

8. The semiconductor device as claimed in claim 1 , wherein said heat diffusion portion further includes another heat diffusion wiring and a second via, said another heat diffusion wiring overlapping with said heat diffusion wiring, in a plan view, and being formed in the same layer as the other one of said upper-layer wiring and said lower-layer wiring, said second via electrically connecting said another heat diffusion wiring and said heat diffusion wiring.

9. The semiconductor device as claimed in claim 1 , wherein said heat diffusion wiring is formed in the same layer as said upper-layer wiring and is placed on a side of said upper-layer wiring, and

wherein said semiconductor device further comprises:

a plate electrode that is placed above said upper-layer wiring;

a third via that connects said upper-layer wiring and said plate electrode; and

a fourth via that connects said plate electrode and said heat diffusion wiring.

10. The semiconductor device as claimed in claim 1 , wherein said heat diffusion wiring is formed in a same layer as said lower-layer wiring and is placed on a side of said lower-layer wiring, and

wherein said semiconductor device further comprises:

a plate electrode that is placed below said lower-layer wiring;

a fifth via that connects said lower-layer wiring and said plate electrode; and

a sixth via that connects said plate electrode and said heat diffusion wiring.

11. The semiconductor device as claimed in claim 1 , wherein said electric fuse comprises a cut-off portion formed between said lower-layer wiring and one of said first via and in said first via.

12. The semiconductor device as claimed in claim 1 , wherein a cut-off point is formed in said first via in the cut-off state.

13. A semiconductor device, comprising:

a substrate;

an electric fuse comprising:

a lower-layer wiring formed over said substrate;

a first via provided on said lower-layer wiring and connected to said lower-layer wiring; and

an upper-layer wiring provided on said first via and connected to said first via, the upper-layer wiring comprising a conductive material and being configured to flow out at a part of the electric fuse and to flow to a vicinity of the upper-wiring layer; and

a heat diffusion portion comprising an upper-layer heat diffusion wiring formed in a same layer as the upper-layer wiring, and formed on a side of said upper-layer wiring, said upper heat diffusion portion being electrically connected to said upper-layer wiring,

wherein said heat diffusion portion is formed at least on a side of a point where said one of said upper-layer wiring and said lower-layer wiring is connected to said first via.

14. The semiconductor device according to claim 13 , further comprising a lower-layer heat diffusion wiring formed in a same layer as said lower-layer wiring, and formed on a side of said lower-layer wiring, said lower-layer heat diffusion portion being electrically connected to said lower-layer wiring, and to be overlapped by said upper-layer heat diffusion wiring.

15. The semiconductor device according to claim 14 , wherein said lower-layer heat diffusion portion comprises:

a lower-layer connection wiring; and

a heat-diffusion lower-layering wiring formed on said side of said lower-layer wiring.

16. The semiconductor device according to claim 15 , wherein said lower-layer heat diffusion portion further comprises a heat diffusion lower-layer via formed on the heat diffusion lower-layer wiring.

17. The semiconductor device according to claim 13 , wherein said upper-layer heat diffusion portion comprises:

an upper-layer connection wiring; and

a heat-diffusion upper-layer wiring formed on said side of said upper-layer wiring, said upper-layer connection wiring connecting said heat diffusion upper layer-wiring to said upper-layer wiring.

18. The semiconductor device according to claim 17 , wherein said upper-layer heat diffusion portion further comprises a heat diffusion upper-layer via formed on the heat diffusion upper-layer wiring.

19. A semiconductor device, comprising:

a. substrate;

a crack assist type electric fuse comprising a lower-layer wiring formed on said substrate, a first via provided on said lower-layer wiring and connected to said lower-layer wiring, and an upper-layer wiring provided on said first via and connected to said first via, the upper-layer wiring comprising a conductive, material and being configured to flow out upon a delivery of a predetermined voltage; and

a heat diffusion portion comprising as heat diffusion wiring that is formed in a same layer as one of said upper-layer wiring and said lower-layer wiring, and is placed on a side of a point where said one of said upper-layer wiring and said lower-layer wiring is connected to said first via, said heat diffusion portion being electrically connected to said one of said upper-layer wiring and said lower-layer wiring.