Semiconductor device and manufacturing method thereof
View Patent ↗A semiconductor memory integrated circuit having an X-row controller which includes a high-speed-operation control circuit by which when receiving a bank active signal, a period for stopping a latch circuit from receiving the X address is produced after a predetermined time has elapsed, and in the other periods, the latch circuit receives and holds the X address; a low-current-operation control circuit by which when receiving no bank active signal, the latch circuit stops receiving the X address, and when receiving the bank active signal, the latch circuit holds the X address after a predetermined time has elapsed; a circuit for selecting whether the bank active signal is output to the high-speed-operation control circuit or the low-current-operation control circuit; and a circuit for selecting whether the latch-circuit control signal from the high-speed-operation control circuit or the latch-circuit control signal from the low-current-operation control circuit is output to the latch circuit.
1. A semiconductor memory integrated circuit comprising:
a controller that reads an address from an address signal line in the semiconductor memory integrated circuit in accordance with a latch-circuit control signal, holds the address in a latch circuit, and outputs the address stored by the latch circuit to a predecoder, wherein the controller includes:
a control circuit that generates and outputs the latch-circuit control signal, by which:
when no bank active signal is input into the control circuit, the latch circuit stops receiving the address, and
when the bank active signal is input into the control circuit, the latch circuit receives and holds the address.
2. The semiconductor memory integrated circuit in accordance with claim 1 , wherein the address is a row address.
3. The semiconductor memory integrated circuit in accordance with claim 1 , further comprising:
an auxiliary control circuit, wherein:
one of the control circuit and the auxiliary control circuit is switchably used in accordance with a switching signal; and
the auxiliary control circuit generates the latch circuit control signal regardless of whether or not the bank active signal is input into the auxiliary control circuit.
4. A semiconductor memory integrated circuit comprising:
a plurality of decoders assigned to a plurality of banks;
a plurality of latch circuits assigned to the decoders, each latch circuit holding an address in accordance with a latch-circuit control signal; and
a control circuit, wherein when a bank active signal is input into the control circuit so that a predetermined bank of the plurality of banks selected, the control circuit supplies the latch-circuit control signal to one of the latch circuits which is assigned to the selected bank, and supplies no latch-circuit control signal to the latch circuits other than the latch circuit assigned to the selected bank.
5. The semiconductor memory integrated circuit in accordance with claim 4 , wherein the decoders are predecoders.
6. A semiconductor memory integrated circuit comprising:
a latch circuit that selectively latches address data from an address signal line; and
an output switch circuit that controls whether the latch circuit receives and latches the address data, wherein:
when a bank active signal has a first state as an input into a control circuit controlling the output switch circuit, the latch circuit stops receiving the address data, and
when the bank active signal has a second state as the input into the control circuit, the latch circuit receives and latches the address data.
7. The semiconductor memory integrated circuit in accordance with claim 6 , wherein the address comprises a row address.
8. The semiconductor memory integrated circuit in accordance with claim 6 , wherein the control circuit controlling the output switch circuit comprises:
a low current control circuit; and
a high speed control circuit,
wherein:
one of the low current control circuit and the high speed control circuit is switchably used in accordance with an input switching signal; and
the high speed control circuit overrides an effect of the bank active signal for controlling the latch circuit.
9. The semiconductor memory integrated circuit of claim 8 , wherein the high speed control circuit permits a faster operation speed of the memory at higher power consumption and the low current control circuit permits a lower power consumption at a lower speed.