IP Library › Granted Patent US 7,960,196
Granted Patent B2
US 7,960,196 · App. 12/462,819 · Granted Jun 14, 2011

Light-emitting device, light-emitting element and method of manufacturing same

Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 7,960,196
App. No.
12/462,819
Granted
Jun 14, 2011
Kind
B2
Abstract

Provided are a light-emitting element and a light-emitting device, and methods of fabricating the same. The method of fabricating a light-emitting element includes forming a buffer layer on a substrate and forming photonic crystal patterns and a pad pattern on the buffer layer. Each of the pad pattern and the photonic crystal patterns are made of a metal material, and the pad pattern is physically connected to the photonic crystal patterns. Forming a light-emitting structure includes sequentially stacking a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type on the buffer layer. And the method also includes forming a first electrode that is electrically connected to the first conductive pattern and forming a second electrode that is electrically connected to the second conductive pattern.

Claims (45)

1. A method of fabricating a light-emitting element, the method comprising:

forming a buffer layer on a substrate;

forming photonic crystal patterns and a pad pattern on the buffer layer, each of the pad pattern and the photonic crystal patterns being made of a metal material, including physically connecting the pad patterns to the photonic crystal patterns;

forming a light-emitting structure, including sequentially stacking a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type on the buffer layer ; and

forming a first electrode and electrically connecting the first electrode to the first conductive pattern and forming a second electrode and electrically connecting the second electrode to the second conductive pattern, wherein the forming of the first electrode and the second electrode comprises:

forming the second electrode on the light-emitting structure after forming the light-emitting structure;

bonding the substrate to a conductive substrate such that the second electrode is disposed between the substrate and the conductive substrate;

removing the substrate; and

forming the first electrode on the buffer layer.

2. The method of claim 1 , including forming the photonic crystal patterns at substantially the same level as the pad pattern.

3. The method of claim 1 , wherein the photonic crystal patterns are a plurality of repetitively formed patterns, and an interval between every two adjacent ones of the repetitive patterns is λ/4 and light generated by the light-emitting structure has a wavelength of λ.

4. The method of claim 1 , wherein the photonic crystal patterns are line patterns or mesh patterns.

5. The method of claim 1 , wherein the second electrode is formed on an upper surface and sidewalls of the light-emitting structure.

6. The method of claim 1 , wherein the forming of the light-emitting structure comprises:

sequentially forming the first conductive layer of the first conductivity type, the light-emitting layer, and the second conductive layer of the second conductivity type on the buffer layer; and

patterning the second conductive layer, the light-emitting layer, and the first conductive layer to complete the light-emitting structure comprising the second conductive pattern, the light-emitting pattern, and the first conductive pattern,

wherein the first conductive pattern is wider than the second conductive pattern and the light-emitting pattern and the first conductive pattern has a protruding portion extending in a lateral direction, and the pad pattern is disposed under the protruding portion of the first conductive pattern.

7. The method of claim 6 , wherein the forming of the first electrode comprises:

patterning part of the protruding portion of the first conductive pattern to expose the pad pattern;

forming an ohmic layer on the exposed pad pattern; and

forming the first electrode on the ohmic layer.

8. The method of claim 6 , further comprising:

forming an insulating layer on the upper surface and sidewalls of the light-emitting structure after forming the light-emitting structure, wherein the forming of the first electrode comprises:

etching a portion of the insulating layer to form a first opening that penetrates the insulating layer;

etching a portion of the first conductive pattern to form a second opening that penetrates the first conductive pattern, the second opening being narrower than the first opening;

forming an ohmic layer which at least partially fills the first opening and the second opening; and

forming the first electrode on the ohmic layer.

9. The method of claim 1 , wherein the forming of the first electrode on the buffer layer comprises:

etching a portion of the buffer layer to expose at least part of the pad pattern;

forming an ohmic layer on the exposed portion of the pad pattern; and

forming the first electrode on the ohmic layer.

10. The method of claim 1 , wherein the conductive substrate has a larger surface area than the substrate.

11. A method of fabricating a light-emitting element, the method comprising:

forming a buffer layer on a substrate;

forming photonic crystal patterns and a pad pattern on the buffer layer, each of the pad pattern and the photonic crystal patterns being made of a metal material, including physically connecting the pad patterns to the photonic crystal patterns;

forming a light-emitting structure, including sequentially stacking a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type on the buffer layer, wherein the forming of the light-emitting structure comprises:

sequentially forming the first conductive layer of the first conductivity type, the light-emitting layer, and the second conductive layer of the second conductivity type on the buffer layer; and

patterning the second conductive layer, the light-emitting layer, and the first conductive layer to complete the light-emitting structure comprising the second conductive pattern, the light-emitting pattern, and the first conductive pattern,

wherein the first conductive pattern is wider than the second conductive pattern and the light-emitting pattern and the first conductive pattern has a protruding portion extending in a lateral direction, and the pad pattern is disposed under the protruding portion of the first conductive pattern;

forming an insulating layer on the upper surface and sidewalls of the light-emitting structure after forming the light-emitting structure; and

forming a first electrode and electrically connecting the first electrode to the first conductive pattern and forming a second electrode and electrically connecting the second electrode to the second conductive pattern, wherein the forming of the first electrode comprises:

etching a portion of the insulating layer to form a first opening that penetrates the insulating layer;

etching a portion of the first conductive pattern to form a second opening that penetrates the first conductive pattern, the second opening being narrower than the first opening;

forming an ohmic layer which at least partially fills the first opening and the second opening; and

forming the first electrode on the ohmic layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 10, 2009
From: KIM, YU-SIK
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 023112/0376 →
Priority Claims (1)
KR 10-2008-0089441 · Sep 10, 2008 · national
Continuity (1)
Related Publication 20100062554A1 · Mar 11, 2010