Anti-reflective device having an anti-reflective surface formed of silicon spikes with nano-tips
Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.
1. A method for forming an anti-reflective device, comprising acts of:
forming a micro-etch mask on a silicon substrate, the silicon substrate having a first side and a second side, with the micro-etch mask being formed on the first side;
forming high-aspect ratio silicon spikes with nano-tips on the first side of the silicon substrate; and
forming a first metallic layer on the first side to absorb infrared light, thereby forming an anti-reflective surface forming a photo-resist on the first side of the silicon substrate to define an aperture, the act of forming the photo-resist being performed prior to the act of forming the silicon spikes; and removing the photo-resist after the act of forming the first metallic layer, thereby creating an anti-reflection surface having an aperture extending from the first side to the second side and being surrounded by silicon spikes on the first side.
2. A method as set forth in claim 1 , wherein in the act of forming the micro-etch mask, the micro-etch mask is a polymer reactive ion etching (REI) grass that is formed on the silicon substrate.
3. A method as set forth in claim 2 , wherein in the act of forming the first metallic layer, the first metallic layer is formed by evaporating Chromium and Gold on the nano-tip surface.
4. A method as set forth in claim 3 , wherein in the act of forming high-aspect ratio silicon spikes with nano-tips on the first side of the silicon substrate, the silicon spikes are formed by subjecting the silicon substrate to a deep reactive ion etching (DRIE) process.
5. A method as set forth in claim 4 , further comprising acts of:
forming a second metallic layer on the second side of the silicon substrate, the second metallic layer being formed to have a hole there through, where the hole is formed to be aligned with the aperture;
attaching a spacer with the first side of the silicon substrate; and
attaching a sensor apparatus with the spacer such that a gap exists between the sensor apparatus and the silicon substrate, thereby forming an anti-reflective device where light entering the hole passes through the aperture to be sensed by the sensor apparatus, and where light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the silicon spikes and thereby prevented from being reflected from the first side toward the sensor apparatus.
6. A method as set forth in claim 1 , wherein in the act of forming the first metallic layer, the first metallic layer is formed by evaporating Chromium and Gold on the nano-tip surface.
7. A method as set forth in claim 1 , wherein in the act of forming high-aspect ratio silicon spikes with nano-tips on the first side of the silicon substrate, the silicon spikes are formed by subjecting the silicon substrate to a deep reactive ion etching (DRIE) process.
8. A method as set forth in claim 1 , further comprising acts of:
forming a second metallic layer on the second side of the silicon substrate, the second metallic layer being formed to have a hole there through, where the hole is formed to be aligned with the aperture;
attaching a spacer with the first side of the silicon substrate; and
attaching a sensor apparatus with the spacer such that a gap exists between the sensor apparatus and the silicon substrate, thereby forming an anti-reflective device where light entering the hole passes through the aperture to be sensed by the sensor apparatus, and where light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the silicon spikes and thereby prevented from being reflected from the first side toward the sensor apparatus.