Method of fabricating semiconductor device
View Patent ↗An insulating film is formed on a main surface of a substrate. A conductive film is formed on the insulating film. A lower layer resist film, an intermediate layer, an anti-reflection film and an upper layer resist film are formed on the conductive film. A focal point at a time of exposure is detected by detecting a height of the upper layer resist film. In detecting the focal point at the time of exposure, a focal point detection light is radiated on the upper layer resist film. After detecting the focal point, the upper layer resist film is exposed and developed thereby to form a resist pattern. With the resist pattern as a mask, the intermediate layer and the anti-reflection film are patterned, and the lower layer resist film is developed. With these patterns as a mask, the conductive film is etched thereby to form a gate electrode.
1. A method of fabricating a semiconductor device, comprising the steps of:
forming a first film over a main surface of a substrate;
forming on the first film an anti-reflection film having absorbency within a wavelength region of a focal point detection light;
forming a second film including a photosensitive material over the first film and on the anti-reflection film;
detecting a focal point at a time of exposure by radiating a one of P polarization light and S polarization light serving as the focal point detection light over the second film and using said one of P polarization light and S polarization light reflected on an upper surface of the second film;
exposing the second film based on detection of said focal point;
patterning the second film; and
patterning the first film with the patterned second film as a mask.
2. The method of fabricating a semiconductor device according to claim 1 , wherein
the anti-reflection film includes at least one of an organic material and an inorganic material.
3. The method of fabricating a semiconductor device according to claim 2 , wherein
the anti-reflection film is formed of an organic material and contains a compound having absorbency within the wavelength region of the focal point detection light.
4. The method of fabricating a semiconductor device according to claim 1 , wherein
the exposure step is a step of conducting liquid immersion lithography.
5. The method of fabricating a semiconductor device according to claim 1 , wherein
a reflectivity of said one of P polarization light and S polarization light is lower than the other one of P polarization light and S polarization light in a surface boundary between said first film and said second film.