Method of manufacture an integrated circuit system with through silicon via

1. A method of manufacture of an integrated circuit system comprising:

providing a substrate including an active device;

forming a through-silicon-via into the substrate;

forming an insulation layer over the through-silicon-via to protect the through-silicon-via;

forming a contact to the active device after forming the insulation layer; and

removing the insulation layer.

2. The method as claimed in claim 1 wherein:

forming the insulation layer includes forming an oxide or a nitride.

3. The method as claimed in claim 1 wherein:

forming the through-silicon-via into the substrate includes forming the through-silicon-via through an isolation structure.

4. The method as claimed in claim 1 further comprising:

forming the through-silicon-via and the contact through a passivation layer formed over the substrate and the active device.

5. The method as claimed in claim 1 wherein:

removing the insulation layer includes planarizing the integrated circuit system to expose the through-silicon-via and the contact.

6. A method of manufacture of an integrated circuit system comprising:

providing a substrate including an active device;

forming a passivation layer over the substrate and the active device;

forming a through-silicon-via through the passivation layer and into the substrate;

forming an insulation layer over the through-silicon-via and the passivation layer to protect the through-silicon-via;

forming a contact to the active device that does not touch the through-silicon-via; and

removing the insulation layer.

7. The method as claimed in claim 6 wherein:

forming the through-silicon-via includes using tungsten or copper.

8. The method as claimed in claim 6 wherein:

forming the contact includes forming a barrier layer.

9. The method as claimed in claim 6 further comprising:

planarizing the integrated circuit system to remove excess material.

10. The method as claimed in claim 6 wherein:

removing the insulation layer includes removing the insulation layer before forming the contact.

11. A method of manufacture of an integrated circuit system comprising:

providing a substrate including an active device;

forming a contact to the active device;

forming an insulation layer over the contact to protect the contact;

forming a through-silicon-via opening into the substrate after forming the insulation layer;

removing the insulation layer; and

forming a through-silicon-via.

12. The method as claimed in claim 11 wherein:

forming the insulation layer includes forming a nitride.

13. The method as claimed in claim 11 wherein:

forming the through-silicon-via opening into the substrate includes forming the through-silicon-via opening through an isolation structure.

14. The method as claimed in claim 11 further comprising:

planarizing the integrated circuit system to expose the through-silicon-via and the contact.

15. The method as claimed in claim 11 wherein:

forming the insulation layer prevents the contact from corroding during formation of the through-silicon-via opening.

16. The method as claimed in claim 11 wherein:

removing the insulation layer includes removing the insulation layer before forming the through-silicon-via.

17. The method as claimed in claim 16 wherein:

forming the through-silicon-via includes using tungsten or copper.

18. The method as claimed in claim 16 wherein:

forming the contact includes forming a barrier layer.

19. The method as claimed in claim 16 wherein:

forming the contact and the through-silicon-via includes using different materials.

20. The method as claimed in claim 16 further comprising:

forming the through-silicon-via and the contact through a passivation layer formed over the substrate and the active device.