Conductive compositions and processes for use in the manufacture of semiconductor devices—organic medium components

1. A thick film conductive composition comprising:

a) one or more electrically conductive powders;

b) one or more glass frits, wherein the T g of the one or more glass frits is 300-600° C., as measured by Differential Thermal Analysis;

c) a ZnO additive; and

d) an organic medium, wherein the organic medium comprises ethyl cellulose and one or more components selected from the group consisting of: Bis(2-(2Butoxyethoxy)Ethyl)Adipate, dibasic ester, Octyl Epoxy Tallate, isotetradecanol, and pentaerythritol ester of hydrogenated rosin,

wherein the ZnO additive is in addition to any ZnO present in the one or more glass frits.

2. The thick film conductive composition of claim 1 , wherein the component is dibasic ester.

3. The thick film conductive composition according to claim 2 , wherein the dibasic ester comprises one or more compounds selected from the group consisting of dimethyl ester of adipic acid, dimethyl ester of glutaric acid, and dimethyl ester of succinic acid.

4. The thick film conductive composition according to claim 1 , wherein the one or more glass frits comprise, based upon weight percent of the total glass composition: SiO 2 1-36, Al 2 O 3 0-7, B 2 O 3 1.5-19, PbO 20-83, ZnO 0-42, CuO 0-4, Bi 2 O 3 0-35, ZrO 2 0-8, TiO 2 0-7, PbF 2 3-34.

5. A structure comprising the thick film composition of claim 1 on a substrate.

6. The structure of claim 5 wherein the substrate comprises one or more insulating layers.

7. The substrate of claim 5 comprising one or more semiconductor substrates.

8. An electrode of a solar cell, formed by applying a thick film conductive composition of claim 1 onto a substrate of the solar cell; and firing the applied thick film conductive composition.

9. A method of manufacturing a semiconductor device comprising:

a) providing one or more semiconductor substrates, one or more insulating films, and a thick film composition, wherein the thick film composition comprises:

i) one or more electrically conductive powders,

ii) one or more glass frits, wherein the T g of the one or more glass frits is 300-600° C., as measured by Differential Thermal Analysis;

iii) a ZnO additive; and

iv) an organic medium, wherein the organic medium comprises ethyl cellulose and one or more components selected from the group consisting of: Bis(2-(2Butoxyethoxy)Ethyl)Adipate, dibasic ester, Octyl Epoxy Tallate, isotetradecanol, and pentaerythritol ester of hydrogenated rosin,

wherein the ZnO additive is in addition to any ZnO present in the one or more glass frits,

b) applying the insulating film on the semiconductor substrate;

c) applying the thick film composition on the insulating film on the semiconductor substrate; and

d) firing the semiconductor, insulating film and thick film composition.

10. The method of claim 9 wherein the insulating film comprises one or more components selected from: titanium oxide, silicon nitride, SiNx:H, silicon oxide, and silicon oxide/titanium oxide.

11. A thick film conductive composition comprising:

a) one or more electrically conductive silver powders;

b) one or more glass frits wherein the T g of the one or more glass frits is 300-600° C., as measured by Differential Thermal Analysis;

c) a ZnO additive; and

d) an organic medium, wherein the organic medium comprises ethyl cellulose and dibasic ester,

wherein the ZnO additive is in addition to any ZnO present in the one or more glass frits.

12. The thick film conductive composition according to claim 11 , wherein the dibasic ester comprises one or more compounds selected from the group consisting of dimethyl ester of adipic acid, dimethyl ester of glutaric acid, and dimethyl ester of succinic acid.