MIM capacitor and metal interconnection
View Patent ↗Disclosed are an MIM (Metal-Insulator-Metal) capacitor and a method of manufacturing the same. The MIM capacitor includes: a lower metal layer and a lower metal interconnection on a substrate; a barrier metal layer on the lower metal layer; an insulating layer on the barrier metal layer; an upper metal layer on the insulating layer; an interlayer dielectric layer having a via hole on the lower metal interconnection; and a plug in the via hole.
1. An MIM (Metal-Insulator-Metal) capacitor, the MIM capacitor comprising:
a plurality of lower capacitor electrode portions and a lower metal interconnection on a substrate, the lower capacitor electrode portions being spaced apart from one another;
a barrier metal layer on the plurality of lower capacitor electrode portions, the barrier metal layer covering a top surface and sidewalls of the lower capacitor electrode portions and the substrate between the lower capacitor electrode portions;
a conformal insulating layer on the barrier metal layer such that a gap exists in the conformal insulation layer between the lower capacitor electrode portions;
an upper capacitor electrode on the conformal insulating layer and in the gap between the lower capacitor electrode portions;
a dielectric layer on the lower metal interconnection and having a via hole therein; and
a plug in the via hole.
2. The MIM capacitor of claim 1 , further comprising an uppermost metal layer on the upper capacitor electrode and the plug.
3. The MIM capacitor of claim 1 , wherein the lower capacitor electrode portions and the lower metal interconnection are spaced apart from each other on the substrate.
4. The MIM capacitor of claim 1 , wherein the lower capacitor electrode portions and the lower metal interconnection include an Al alloy, a layer of Ti and/or TiN, or a composite layer thereof.
5. The MIM capacitor of claim 1 , wherein the barrier metal layer includes a Ti layer and a TiN layer.
6. The MIM capacitor of claim 1 , wherein the conformal insulating layer comprises a SiON layer.
7. The MIM capacitor of claim 1 , wherein the upper capacitor electrode and the plug include tungsten.
8. The MIM capacitor of claim 1 , wherein the barrier metal layer is on the only the lower capacitor electrode portions.
9. The MIM capacitor of claim 1 , wherein the barrier metal layer is not on the lower metal interconnection.
10. The MIM capacitor of claim 1 , wherein the barrier metal layer includes a Ti layer or a TiN layer.
11. An MIM (Metal-Insulator-Metal) capacitor, the MIM capacitor comprising:
a plurality of lower capacitor electrode portions and a lower metal interconnection on a substrate, the lower capacitor electrode portions being spaced apart from one another;
a barrier metal layer on the plurality of lower capacitor electrode portions, wherein the barrier metal layer covers a top surface and sidewalls of the lower capacitor electrode portions and the substrate between the lower capacitor electrode portions;
a conformal insulating layer on the barrier metal layer such that a gap exists in the conformal insulating layer between the lower capacitor electrode portions, the conformal insulating layer comprising a SiON layer;
an upper capacitor electrode on the conformal insulating layer and in the gap between the lower capacitor electrode portions;
a dielectric layer on the lower metal interconnection and having a via hole therein; and
a plug in the via hole.
12. The MIM capacitor of claim 11 , further comprising an uppermost metal layer on the upper capacitor electrode and the plug.
13. The MIM capacitor of claim 11 , wherein the lower capacitor electrode portions and the lower metal interconnection are spaced apart from each other on the substrate.
14. The MIM capacitor of claim 11 , wherein the lower capacitor electrode portions and the lower metal interconnection include an Al alloy, a layer of Ti and/or TiN, or a composite layer thereof.
15. The MIM capacitor of claim 11 , wherein the barrier metal layer includes a Ti layer and a TiN layer.
16. The MIM capacitor of claim 11 , wherein the upper capacitor electrode and the plug include tungsten.
17. The MIM capacitor of claim 11 , wherein the barrier metal layer is on the only the lower capacitor electrode portions.
18. The MIM capacitor of claim 11 , wherein the barrier metal layer is not on the lower metal interconnection.
19. The MIM capacitor of claim 1 , wherein the spacing between the lower capacitor electrode portions is from 0.1 μm to 0.5 μm.
20. The MIM capacitor of claim 11 , wherein the spacing between the lower capacitor electrode portions is from 0.1 μm to 0.5 μm.