Flexible lateral pin diodes and three-dimensional arrays and imaging devices made therefrom
Flexible lateral p-i-n (“PIN”) diodes, arrays of flexible PIN diodes and imaging devices incorporating arrays of PIN diodes are provided. The flexible lateral PIN diodes are fabricated from thin, flexible layers of single-crystalline semiconductor. A plurality of the PIN diodes can be patterned into a single semiconductor layer to provide a flexible photodetector array that can be formed into a three-dimensional imaging device.
1. A lateral PIN diode comprising a flexible layer of single-crystalline germanium on a flexible substrate, the layer of single-crystalline germanium having a thickness no greater than about 2000 nm and comprising an intrinsic region disposed laterally between a n-type doped region and a p-type doped region, wherein the intrinsic region comprises a central section, a first flanking section and a second flanking section, wherein the central section is disposed between the first flanking section and the second flanking section, and further wherein the central section is wider than the first and second flanking sections, wherein the layer of single-crystalline germanium has a polygon-shaped perimeter having at least five sides and further wherein the layer of single-crystalline germanium has a plurality of holes extending therethrough.
2. A lateral PIN diode comprising a flexible layer of single-crystalline germanium on a flexible substrate, the layer of single-crystalline germanium having a thickness no greater than about 2000 nm and comprising an intrinsic region disposed laterally between a n-type doped region and a p-type doped region, wherein the intrinsic region comprises a central section, a first flanking section and a second flanking section, wherein the central section is disposed between the first flanking section and the second flanking section, and further wherein the central section is wider than the first and second flanking sections, and still further wherein the central section of the intrinsic region has a diameter that is 10 to 100 times larger than the diameters of the first and second flanking sections of the intrinsic region.
3. A lateral PIN diode comprising a flexible layer of single-crystalline germanium on a flexible substrate, the layer of single-crystalline germanium having a thickness no greater than about 2000 nm and comprising an intrinsic region disposed laterally between a n-type doped region and a p-type doped region, wherein the intrinsic region comprises a central section, a first flanking section and a second flanking section, wherein the central section is disposed between the first flanking section and the second flanking section, and further wherein the central section is wider than the first and second flanking sections, and still further wherein the layer of single-crystalline germanium has a polygon-shaped perimeter having at least five sides; the central section of the intrinsic region is located at the center of the polygon-shaped PIN diode; and the intrinsic region, the n-type doped region and the p-type doped region each extends through the layer of single-crystalline germanium.
4. The PIN diode of claim 3 , wherein the central section of the intrinsic region has a diameter that is 10 to 100 times larger than the diameters of the first and second flanking sections of the intrinsic regions.
5. A photodiode array comprising a plurality of flexible lateral PIN diodes on a flexible substrate, the PIN diodes comprising flexible layers of single-crystalline semiconductor having a polygon shaped perimeter with at least five sides arranged in a honeycomb pattern, wherein the PIN diodes are lateral PIN diodes comprising a flexible layer of single-crystalline germanium on a flexible substrate, the layer of single-crystalline germanium having a thickness no greater than about 2000 nm and comprising an intrinsic region disposed laterally between a n-type doped region and a p-type doped region, wherein the intrinsic region comprises a central section, a first flanking section and a second flanking section, wherein the central section is disposed between the first flanking section and the second flanking section, and further wherein the central section is wider than the first and second flanking sections, and still further wherein the layer of single-crystalline germanium has a polygon-shaped perimeter having at least five sides; the central section of the intrinsic region is located at the center of the polygon-shaped PIN diode; and the intrinsic region, the n-type doped region and the p-type doped region each extend through the layer of single-crystalline germanium.
6. The photodiode array of claim 5 , wherein the plurality of PIN diodes includes PIN diodes comprising layers of single-crystalline semiconductor having a hexagon-shaped perimeter and PIN diodes having a pentagon-shaped perimeter.
7. The photodiode array of claim 6 , wherein the perimeter of the array defines a plurality of extensions configured to form a curved photodiode array upon application of a flexing force.
8. The photodiode array of claim 7 , wherein the curved photodiode array is a substantially hemispherical array.
9. A substantially hemispherical photodiode array formed by applying a flexing force to the photodiode array of claim 8 .
10. The photodiode array of claim 7 , comprising a central section from which the extensions extend, the central section comprising a central pentagonal PIN diode, five irregular hexagonal PIN diodes forming a ring around the central PIN diode, and five pairs of irregular pentagonal PIN diodes disposed around the circumference of the ring of irregular hexagonal PIN diodes.
11. The photodiode array of claim 10 , wherein the array has five extensions.
12. A flexible photodiode array, at least a portion of which is substantially hemispherically-shaped, comprising a plurality of flexible lateral PIN diodes on a flexible substrate, wherein the PIN diodes are lateral PIN diodes comprising a flexible layer of single-crystalline germanium on a flexible substrate, the layer of single-crystalline germanium having a thickness no greater than about 2000 nm and comprising an intrinsic region disposed laterally between a n-type doped region and a p-type doped region, wherein the intrinsic region comprises a central section, a first flanking section and a second flanking section, wherein the central section is disposed between the first flanking section and the second flanking section, and further wherein the central section is wider than the first and second flanking sections, and still further wherein the layer of single-crystalline germanium has a polygon-shaped perimeter having at least five sides; the central section of the intrinsic region is located at the center of the polygon-shaped PIN diode; and the intrinsic region, the n-type doped region and the p-type doped region each extend through the layer of single-crystalline germanium.
13. The photodiode array of claim 12 , wherein the PIN diodes comprise layers of single-crystalline semiconductor having polygon-shaped perimeters with at least five sides are arranged in a honeycomb pattern.