Methods of splitting CdZnTe layers from CdZnTe substrates for the growth of HgCdTe
Methods of producing CdZnTe (CZT) layers for the epitaxial growth of HgCdTe thereon include implanting ions into a CZT substrate at a low temperature to form a damaged layer underneath a CZT surface layer, bonding a wafer to the CZT substrate about the CZT surface layer using a bonding material, and, annealing the CZT substrate for a time sufficient to facilitate the splitting of the CZT substrate at the damaged layer from the CZT surface layer.
1. A method of producing CdZnTe (CZT) layers for the epitaxial growth of HgCdTe thereon, the method comprising:
implanting ions into a CZT substrate at a low temperature to form a damaged layer underneath a CZT surface layer;
bonding a wafer to the CZT surface layer of the CZT substrate using a bonding material, wherein the bonding material comprises chalcogenide glass or polysilazanes;
annealing the CZT substrate for a time sufficient to facilitate the splitting of the CZT substrate at the damaged layer from the CZT surface layer.
2. The method of claim 1 wherein low temperature comprises temperatures between about −125° C. and about −225° C.
3. The method of claim 1 wherein the bonding material is chalcogenide glass.
4. The method of claim 1 wherein the bonding material is a polysilazane.
5. The method of claim 1 wherein bonding occurs before annealing or after annealing.
6. The method of claim 1 wherein implanting ions comprises a plurality of singularly charged hydrogen, helium and/or boron ions.
7. The method of claim 6 wherein implanting ions is performed with an energy of between about 250 keV and about 3.0 MeV.
8. The method of claim 1 wherein annealing comprises heating the CZT substrate with implanted ions to a temperature between 100° C. and 300° C.
9. A method of producing HgCdTe on a layer of CdZnTe (CZT) split from a substrate, the method comprising:
providing a CZT substrate;
implanting ions into the CZT substrate at a low temperature;
annealing the CZT substrate;
splitting the CZT substrate into a plurality of CZT layers; and,
producing HgCdTe via epitaxial growth onto one of the plurality of CZT layers, wherein the one of the plurality of CZT layers is bonded to a wafer using chalcogenide glass or polysilazanes prior to producing HgCdTe via epitaxial growth.
10. The method of claim 9 wherein low temperature comprises temperatures between about −125° C. and about −225° C.
11. The method of claim 10 wherein implanting ions is performed with an energy of between about 250 keV and about 3.0 MeV.
12. The method of claim 9 wherein a CZT surface layer about the CZT substrate is bonded to the wafer prior to annealing the CZT substrate.
13. The method of claim 12 wherein the wafer comprises a silicon wafer.