Slurry composition and method for chemical mechanical polishing of copper integrated with tungsten based barrier metals
View Patent ↗The present invention is related to a slurry composition for polishing copper integrated with tungsten containing barrier layers and its use in a CMP method. The present invention is also related to a method for polishing copper integrated with tungsten containing barrier layers by means of an aqueous solution containing abrasive particles, an inorganic acid such as HNO 3 as etchant for copper that prevents galvanic corrosion of the tungsten containing metal barrier and at least one organic compound to provide sufficient copper corrosion inhibition.
1. A method for polishing a copper damascene structure, the method comprising:
applying a slurry composition comprising abrasive particles, HNO 3 and an oxidized sugar compound, wherein the slurry composition contains no H 2 O 2 , to the copper damascene structure, wherein the structure has an integrated tungsten-containing barrier layer, whereby the copper damascene structure is polished.
2. The method of claim 1 , further comprising:
using an H 2 O 2 -containing slurry composition comprising abrasive particles to substantially remove an overburden of copper from the copper damascene structure, wherein the step of using an H 2 O 2 -containing slurry composition is conducted before the step of applying a slurry composition comprising abrasive particles, HNO 3 and an oxidized sugar compound.
3. The method of claim 1 , wherein the slurry composition further comprises a monosaccharide or a mixture of monosaccharides.
4. The method of claim 3 , wherein the monosaccharide is selected from the group consisting of fructose, galactose, and glucose.
5. The method of claim 1 , wherein the slurry composition further comprises an organic acid selected from the group consisting of acetic acid, malic acid, and citric acid.
6. A method for polishing a copper damascene structure, the method comprising:
applying a slurry composition comprising abrasive particles, from about 1.5 wt. % to about 5.0 wt. % HNO 3 and from about 0.00001 wt. % to about 0.5 wt. % aldaric acid, wherein the slurry composition contains no H 2 O 2 , to the copper damascene structure, wherein the structure has an integrated tungsten-containing barrier layer, whereby the copper damascene structure is polished.
7. The method of claim 1 , wherein a HNO 3 concentration of the slurry composition is from about 1.5 wt. %, to about 5.0 wt. %, based on a total weight of the composition.
8. The method of claim 7 , wherein the slurry composition further comprises a sugar compound, wherein a sugar compound concentration of the slurry composition is from about 0.5 wt. % to about 15 wt. %, based on a total weight of the composition.
9. The method of claim 7 , wherein an oxidized smear compound concentration of the slurry composition is from about 0.0001 wt. % to about 0.5 wt. %, based on a total weight of the composition.
10. The method of claim 1 , wherein copper is removed at a rate of about 30 nm per minute.
11. The method of claim 1 , wherein a WNC etch rate is about 1 nm per minute.
12. A method for reducing or preventing galvanic corrosion of at least one of copper and tungsten, the method comprising the step of:
applying a slurry composition comprising HNO 3 and an oxidized sugar compound, wherein the slurry composition contains no H 2 O 2 , to copper integrated with a tungsten-containing barrier layer, whereby galvanic corrosion of at least one of copper and tungsten is prevented or reduced.
13. The method of claim 12 , wherein the slurry composition exhibits low or negligible galvanic current for a Cu—WNC galvanic couple.
14. The method of claim 12 , wherein the slurry composition further comprises abrasive particles.
15. The method of claim 12 , wherein a HNO 3 concentration of the slurry composition is from about 1.5 wt. %, to about 5.0 wt. %, based on a total weight of the composition.
16. The method of claim 15 , wherein the slurry composition further comprises a sugar compound, and wherein a sugar compound concentration of the slurry composition is from about 0.5 wt. % to about 15 wt. %, based on a total weight of the composition.
17. The method of claim 15 , wherein an oxidized smear compound concentration of the slurry composition is from about 0.0001 wt. % to about 0.5 wt. %, based on a total weight of the composition.
18. A method for reducing or preventing galvanic corrosion of at least one of copper and tungsten, the method comprising the step of:
applying a slurry composition comprising from about 1.5 wt. % to about 5.0 wt. % HNO 3 and from about 0.00001 wt. % to about 0.5 wt. % of aldaric acid, wherein the slurry composition contains no H 2 O 2 , to copper integrated with a tungsten-containing barrier layer, whereby galvanic corrosion of at least one of copper and tungsten is prevented or reduced.
19. The method of claim 1 , wherein the HNO 3 acts as an oxidizing compound for Cu and gives rise to no galvanic corrosion when the slurry composition is used to polish Cu structures with integrated W-containing barrier layers.
20. The method of claim 1 , wherein the HNO 3 replaces conventionally used oxidizer in the slurry composition.
21. The method of claim 12 , wherein the HNO 3 acts as an oxidizing compound for Cu and gives rise to no galvanic corrosion when the slurry composition is used to polish Cu structures with integrated W-containing barrier layers.
22. The method of claim 12 , wherein the HNO 3 replaces conventionally used oxidizer in the slurry composition.
23. The method of claim 1 , wherein the slurry composition consists essentially of the abrasive particles, the HNO 3 and the oxidized sugar compound in an aqueous composition.
24. The method of claim 12 , wherein the slurry composition consists essentially of the abrasive particles, the HNO 3 and the oxidized sugar compound in an aqueous composition.