Metallization method for solar cells

1. A method for producing a contact structure of a semiconductor component, the method comprising:

providing a semiconductor substrate comprising:

a first side;

a second side opposite to said first side;

at least one p-doped region; and

at least one n-doped region;

metallizing at least a portion of the regions in order to produce:

at least one p-contact which is in electrical contact with the at least one p-doped region; and

at least one n-contact which is in electrical contact with the at least one n-doped region,

with the at least one p-contact and the at least one n-contact being produced simultaneously.

2. A method according to claim 1 , wherein the semiconductor component is a solar cell.

3. A method according to claim 1 , wherein at least one currentless metal deposition process is provided for metallization.

4. A method according to claim 1 , wherein at least one galvanic metal deposition process is provided for metallization.

5. A method according to claim 1 , wherein at least one of the group comprising nickel, cobalt, palladium, silver, chromium and an alloy of these metals is deposited on the semiconductor substrate during metallization.

6. A method according to claim 1 , wherein the contacts are thickened by at least one of the group comprising a galvanic and a currentless process.

7. A method according to claim 6 , wherein the thickening of the p- and n-contacts takes place simultaneously.

8. A method according to claim 6 , wherein the thickening of the contacts takes place at different speeds so that the contacts have a different layer thickness.

9. A method according to claim 1 , wherein the at least one p-doped region and the at least one n-doped region are arranged on opposite sides of the semiconductor substrate.

10. A method according to claim 1 , wherein the at least one p-doped region and the at least one n-doped region are arranged on the same side of the semiconductor substrate.

11. A method according to claim 1 , wherein the semiconductor substrate is provided with a dielectric insulation layer prior to metallization.

12. A method according to claim 11 , wherein a region of the insulation layer is provided with openings prior to the production of the contacts.

13. A method according to claim 12 , wherein a doping of the semiconductor substrate takes place in the region of the openings when the insulation layer is opened.

14. A method according to claim 12 , wherein the insulation layer is provided with a mask of an organic material before the openings are formed.

15. A method according to claim 14 , wherein the insulation layer is provided with a mask of paraffin before the openings are formed.