Semiconductor device
View Patent ↗In a semiconductor device, a high-side driver is arranged in a region closer to a periphery of a semiconductor substrate than a high-side switch, and a low-side driver is arranged in a region closer to the periphery of the semiconductor substrate than the low-side switch. By this means, a path from a positive terminal of an input capacitor to a negative terminal of the input capacitor via the high-side switch and the low-side switch is short, a path from a positive terminal of a drive capacitor to a negative terminal of the drive capacitor via the low-side driver is short, and a path from a positive terminal of a boot strap capacitor to a negative terminal of the boot strap capacitor via the high-side driver is short, and therefore, the parasitic inductance can be reduced, and the conversion efficiency can be improved.
1. A semiconductor device comprising:
a high-side switch having a drain electrically connected to an input power supply potential and a source electrically connected to an output wire;
a high-side driver for driving the high-side switch, electrically connected to an external bootstrap capacitor;
a low-side switch having a drain electrically connected to the output wire and a source electrically connected to a reference potential wire; and
a low-side driver for driving the low-side switch, electrically connected to an external drive capacitor,
the high-side switch, the high-side driver, the low-side switch, and the low-side driver being formed on the same semiconductor substrate, wherein
the high-side driver is arranged on a periphery side of the high-side switch in a region closer to a first periphery of the semiconductor substrate than the high-side switch;
the low-side driver is arranged on a periphery side of the low-side switch in a region closer to a second periphery of the semiconductor substrate than the low-side switch,
the high-side driver is arranged between the bootstrap capacitor and a region where the high-side switch is formed,
the low-side driver is arranged between the drive capacitor and a region where the low-side switch is formed, and
the periphery side of the high-side switch and the periphery side of the low-side switch are oppositely positioned to each other so as to sandwich the high-side switch and the low-side switch therebetween.
2. The semiconductor device according to claim 1 , wherein
bumps are used for connecting portions of the high-side switch and the low-side switch.
3. The semiconductor device according to claim 1 , wherein
a lateral MOSFET is used for the high-side switch and the low-side switch.
4. A semiconductor device comprising:
a high-side switch having a drain electrically connected to an input power supply potential and a source electrically connected to an output wire;
a high-side drivers for driving the high-side switch, including a first high-side driver electrically connected to an external bootstrap capacitor;
a low-side switch having a drain electrically connected to the output wire and a source electrically connected to a reference potential wire; and
a low-side drivers for driving the low-side switch, including a first low-side driver electrically connected to an external drive capacitor,
the high-side switch, the high-side drivers, the low-side switch, and the low-side drivers being formed on the same semiconductor substrate, wherein
the first high-side driver is arranged on a periphery side of the high-side switch in a region closer to a first periphery of the semiconductor substrate than the high-side switch, and a second one of the high-side drivers is arranged in a region closer to the center of the semiconductor substrate than the high-side switch;
the first low-side driver is arranged on a periphery side of the low-side switch in a region closer to a second periphery of the semiconductor substrate than the low-side switch, and a second one of the low-side drivers is arranged in a region closer to the center of the semiconductor substrate than the low-side switch;
the first high-side driver is arranged between the bootstrap capacitor and a region where the high-side switch is formed,
the first low-side driver is arranged between the drive capacitor and a region where the low-side switch is formed, and
the periphery side of the high-side switch and the periphery side of the low-side switch are oppositely positioned to each other so as to sandwich the high-side switch and the low-side switch therebetween.
5. The semiconductor device according to claim 4 , wherein
bumps are used for connecting portions of the high-side switch and the low-side switch.
6. The semiconductor device according to claim 4 , wherein
a lateral MOSFET is used for the high-side switch and the low-side switch.