Liquid crystalline organic semiconductor material and organic electron device
A liquid crystalline organic semiconductor material, having a compound having at least one bonding form selected from the group consisting of (p-type organic semiconductor compound residue)-(n-type organic semiconductor compound residue)-(p-type organic semiconductor compound residue), and (n-type organic semiconductor compound residue)-(p-type organic semiconductor compound residue)-(n-type organic semiconductor compound residue).
1. A liquid crystalline organic semiconductor material, comprising a thermotropic liquid crystalline compound having at least one bonding form selected from the group consisting of (p-type organic semiconductor compound residue)-(n-type organic semiconductor compound residue)-(p-type organic semiconductor compound residue), and (n-type organic semiconductor compound residue)-(p-type organic semiconductor compound residue)-(n-type organic semiconductor compound residue), wherein the phase transition temperature of the liquid crystalline compound between a liquid crystal phase and an isotropic liquid phase in a temperature raising step is 200° C. or higher.
2. An organic semiconductor material for organic thin-film transistor, which comprises the liquid crystalline organic semiconductor material according to claim 1 .
3. An organic semiconductor material for an organic thin-film photoelectric conversion device, which comprises the liquid crystalline organic semiconductor material according to claim 1 .
4. A thin film comprising the liquid crystalline organic semiconductor material according to claim 1 .
5. The thin film according to claim 4 , wherein the film is formed by a wet film forming process.
6. The thin film according to claim 4 , wherein an average domain size of a liquid crystal or crystal of the liquid crystalline organic semiconductor material is larger than a thickness of the film.
7. A liquid crystalline organic semiconductor material, comprising a thermotropic liquid crystalline compound having at least one bonding form selected from the group consisting of (p-type organic semiconductor compound residue)-(n-type organic semiconductor compound residue)-(p-type organic semiconductor compound residue), and (n-type organic semiconductor compound residue)-(p-type organic semiconductor compound residue)-(n-type organic semiconductor compound residue), wherein the n-type organic semiconductor compound residue in the liquid crystalline compound is any one of a naphthalenetetracarbonyl compound residue, perylenetetracarbonyl compound residue, and a terrylenetetracarbonyl compound residue.
8. A liquid crystalline organic semiconductor material, comprising a thermotropic liquid crystalline compound having at least one bonding form selected from the group consisting of (p-type organic semiconductor compound residue)-(n-type organic semiconductor compound residue)-(p-type organic semiconductor compound residue), and (n-type organic semiconductor compound residue)-(p-type organic semiconductor compound residue)-(n-type organic semiconductor compound residue), wherein the p-type organic semiconductor compound residue in the liquid crystalline compound is a triphenylamine residue.
9. A liquid crystalline organic semiconductor material, comprising a thermotropic liquid crystalline compound having at least one bonding form selected from the group consisting of (p-type organic semiconductor compound residue)-(n-type organic semiconductor compound residue)-(p-type organic semiconductor compound residue), and (n-type organic semiconductor compound residue)-(p-type organic semiconductor compound residue)-(n-type organic semiconductor compound residue), wherein the liquid crystalline compound is represented by any one of Formulae 1 to 3:
wherein R and R 1 each independently represents a hydrogen atom or a substituent; X 1 , X 2 , X 3 , X 4 , and X 5 each independently represents a single bond or a divalent linking group; a, b, c, and d each denotes an integer; n denotes an integer of 1 to 3;
R 2 represents a halogen atom, an alkyl group having 5 to 20 carbon atoms, an alkenyl group, an alkynyl group, an aryl group, a heterocyclic group, a cyano group, a hydroxyl group, a nitro group, a carboxyl group, an alkoxy group, an aryloxy group, a silylyoxy group, a heterocyclic oxy group, an acyloxy group, a carbamoyloxy group, an alkoxycarbonyloxy group, an aryloxycarbonyloxy group, an amino group, an ammonio group, an acylamino group, an aminocarbonylamino group, an alkoxycarbonylamino group, an aryloxycarbonylamino group, a sulfamoylamino group, an alkylsufonylamino group, an arylsulfonylamino group, a mercapto group, an alkylthio group, an arylthio group, a heterocyclic thio group, a sulfamoyl group, a sulfo group, an alkylsulfinyl group, an arylsulfinyl group, an alkylsufonyl group, an arylsufonyl group, an acyl group, an aryloxycarbonyl group, an alkoxycarbonyl group, a carbomoyl group, an arylazo group, a heterocyclic azo group, an imido group, a phoshino group, a phosphyinyl group, a phosphinyloxy group, a phosphinylamino group, a phosphono group, a silyl group, a hydrazino group, an ureido group, a boronic acid group, a phosphate group, and a sulfate group, and
in the case of a plurality of R, R 1 , R 2 , X 1 , X 2 , X 3 , X 4 , or X 5 , they may be the same or different.
10. The liquid crystalline organic semiconductor material according to claim 9 , wherein a length of the linking group represented by X 1 , X 3 and X 4 each independently corresponds to 0 to 6 number of atom(s) provided that “number atom(s): 0” means a single bond.
11. A liquid crystal compound represented by any one of Formulae 1 to 3:
wherein R and R 1 each independently represents a hydrogen atom or a substituent; X 1 , X 2 , X 3 , X 4 , and X 5 each independently represents a single bond or a divalent linking group; a, b, c, and d each denotes an integer; n denotes an integer of 1 to 3;
R 2 represents a halogen atom, an alkyl group having 5 to 20 carbon atoms, an alkenyl group, an alkynyl group, an aryl group, a heterocyclic group, a cyano group, a hydroxyl group, a nitro group, a carboxyl group, an alkoxy group, an aryloxy group, a silylyoxy group, a heterocyclic oxy group, an acyloxy group, a carbamoyloxy group, an alkoxycarbonyloxy group, an aryloxycarbonyloxy group, an amino group, an ammonio group, an acylamino group, an aminocarbonylamino group, an alkoxycarbonylamino group, an aryloxycarbonylamino group, a sulfamoylamino group, an alkylsufonylamino group, an arylsulfonylamino group, a mercapto group, an alkylthio group, an arylthio group, a heterocyclic thio group, a sulfamoyl group, a sulfo group, an alkylsulfinyl group, an arylsulfinyl group, an alkylsufonyl group, an arylsufonyl group, an acyl group, an aryloxycarbonyl group, an alkoxycarbonyl group, a carbomoyl group, an arylazo group, a heterocyclic azo group, an imido group, a phoshino group, a phosphyinyl group, a phosphinyloxy group, a phosphinylamino group, a phosphono group, a silyl group, a hydrazino group, an ureido group, a boronic acid group, a phosphate group, and a sulfate group, and
in the case of a plurality of R, R 1 , R 2 , X 1 , X 2 , X 3 , X 4 , or X 5 , they may be the same or different.
12. An organic electronic device, utilizing a thermotropic liquid crystalline organic semiconductor material that comprises, in the molecule thereof, a p-type organic semiconductor compound residue and a n-type organic semiconductor compound residue,
wherein the phase transition temperature of the liquid crystalline organic semiconductor material between a liquid crystal phase and an isotropic liquid phase in a temperature raising step is 200° C. or higher.
13. The organic electronic device according to claim 12 , wherein an average domain size of a liquid crystal or crystal of the liquid crystalline organic semiconductor material is larger than a distance between electrodes of the device.
14. The organic electronic device according to claim 12 , wherein the organic electronic device is an organic thin-film transistor.
15. The organic electronic device according to claim 12 , wherein the organic electronic device is an organic thin-film photoelectric conversion device.
16. The organic electronic device according to claim 12 , wherein the organic electronic device comprises an electron-transporting buffer layer between at least one semiconductor active layer and at least one electrode.
17. The organic electronic device according to claim 12 , wherein the organic electronic device comprises a hole-transporting buffer layer between at least one semiconductor active layer and at least one electrode.
18. The organic electronic device according to claim 12 , wherein a film thickness of a semiconductor active layer is 1 nm or more and 1 μm or less.
19. The organic electronic device according to claim 12 , wherein a semiconductor active layer is formed by a wet film forming process.
20. The organic electronic device according to claim 12 , wherein the liquid crystalline organic semiconductor material is sealed in an inert gas atmosphere.
21. An organic electronic device, utilizing a liquid crystalline organic semiconductor material that comprises a thermotropic liquid crystalline compound having at least one bonding form of (p-type organic semiconductor compound residue)-(n-type organic semiconductor compound residue),
wherein the phase transition temperature of the liquid crystalline compound between a liquid crystal phase and an isotropic liquid phase in a temperature raising step is 200° C. or higher.
22. The organic electronic device according to claim 21 , wherein the liquid crystalline organic semiconductor material comprises a thermotropic liquid crystalline compound having at least one bonding form selected from the group consisting of (p-type organic semiconductor compound residue)-(n-type organic semiconductor compound residue)-(p-type organic semiconductor compound residue), and (n-type organic semiconductor compound residue)-(p-type organic semiconductor compound residue)-(n-type organic semiconductor compound residue).
23. The organic electronic device according to claim 21 , wherein an average domain size of a liquid crystal or crystal of the liquid crystalline organic semiconductor material is larger than a distance between electrodes of the device.
24. The organic electronic device according to claim 21 , wherein the organic electronic device is an organic thin-film transistor.
25. The organic electronic device according to claim 21 , wherein the organic electronic device is an organic thin-film photoelectric conversion device.
26. The organic electronic device according to claim 21 , wherein the organic electronic device comprises an electron-transporting buffer layer between at least one semiconductor active layer and at least one electrode.
27. The organic electronic device according to claim 21 , wherein the organic electronic device comprises a hole-transporting buffer layer between at least one semiconductor active layer and at least one electrode.
28. The organic electronic device according to claim 21 , wherein a film thickness of a semiconductor active layer is 1 nm or more and 1 μm or less.
29. The organic electronic device according to claim 21 , wherein a semiconductor active layer is formed by a wet film forming process.
30. The organic electronic device according to claim 21 , wherein the liquid crystalline organic semiconductor material is sealed in an inert gas atmosphere.