Metal gate transistor and resistor and method for fabricating the same
View Patent ↗A method for fabricating metal gate transistor and resistor is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation in the substrate of the resistor region; forming a tank in the shallow trench isolation of the resistor region; forming at least one gate in the transistor region and a resistor in the tank of the resistor region; and transforming the gate into a metal gate transistor.
1. A transistor with metal gate, comprising:
a substrate having a transistor region and a resistor region;
a shallow trench isolation disposed in the substrate of the resistor region;
a tank formed in the shallow trench isolation of the resistor region;
a resistor disposed in the tank of the shallow trench isolation; and
a metal gate transistor disposed on the substrate of the transistor region.
2. The transistor with metal gate of claim 1 , wherein the resistor is a polysilicon resistor.
3. The transistor with metal gate of claim 1 , further comprising a plurality of dummy patterns disposed in the resistor region.
4. The transistor with metal gate of claim 3 , wherein the dummy patterns comprise dummy polysilicon patterns or dummy conductive patterns.
5. The transistor with metal gate of claim 3 , wherein the dummy patterns are disposed in the tank or on surface of the shallow trench isolation outside the tank.
6. The transistor with metal gate of claim 1 , further comprising a plurality of polysilicon spacers disposed in the corners of the tank.
7. The transistor with metal gate of claim 1 , wherein the surface of the shallow trench isolation contacting the resistor is not even with the shallow trench isolation surrounding the resistor.
8. The transistor with metal gate of claim 1 , further comprising a plurality of contact plugs connecting the resistor and the metal gate transistor.