Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device

1. A method for fabricating a vertical nitride semiconductor light emitting device, comprising steps of:

preparing a GaN substrate;

forming a mask layer with a predetermined pattern to expose a partial area of the GaN substrate;

forming a buffer layer on the partially exposed GaN substrate, the buffer layer made of a material having a 10% or less lattice mismatch with GaN, wherein the buffer layer comprises one selected from a group consisting of ZnO, Ga 2 O 3 and ZrB 2 ;

laterally growing a first conductivity-type nitride-based compound semiconductor doped with first conductive impurities from a top surface of the buffer layer toward a top surface of the mask layer and vertically growing the first conductivity-type nitride-based compound semiconductor to form a first conductivity-type nitride-based compound semiconductor layer, and growing an active layer made of a nitride-based compound on the first conductivity-type nitride-based compound semiconductor layer and a second conductivity type nitride-based compound layer doped with second conductive impurities on the active layer, thereby forming a light emitting structure,

forming a conductive carrier substrate on the light emitting structure; and

removing the mask layer and the buffer layer via wet-etching to separate the light emitting structure from the GaN substrate.

2. The method according to claim 1 , wherein the buffer layer has a 5% or less lattice mismatch with the GaN.

3. The method according to claim 1 , wherein the mask layer comprises a silicon oxide film or a silicon nitride film.

4. The method according to claim 1 , wherein a wet-etching solution used in the wet-etching comprises HCl or HF.

5. The method according to claim 1 , wherein the light emitting structure forming step comprises growing the nitride-based semiconductor compound by MOCVD.

6. The method according to claim 1 , further comprising forming a first electrode on an underside of the first conductivity-type nitride-based compound semiconductor layer from which the GaN substrate is separated, and a second electrode on a top surface of the conductive carrier substrate.

7. A method for fabricating a vertical nitride semiconductor light emitting device, comprising steps of:

preparing a GaN substrate;

forming a mask layer with a predetermined pattern to expose a partial area of the GaN substrate;

forming a buffer layer on the partially exposed GaN substrate, the buffer layer made of a material having a 10% or less lattice mismatch with GaN;

laterally growing a first conductivity-type nitride-based compound semiconductor doped with first conductive impurities from a top surface of the buffer layer toward a top surface of the mask layer and vertically growing the first conductivity-type nitride-based compound semiconductor to form a first conductivity-type nitride-based compound semiconductor layer, and growing an active layer made of a nitride-based compound on the first conductivity-type nitride-based compound semiconductor layer and a second conductivity type nitride-based compound layer doped with second conductive impurities on the active layer, thereby forming a light emitting structure,

forming a conductive carrier substrate on the light emitting structure; and

removing the mask layer and the buffer layer via wet-etching to separate the light emitting structure from the GaN substrate.

8. The method according to claim 7 , wherein the buffer layer comprises one selected from a group consisting of Ga 2 O 3 and ZrB 2 .