Organic transistor array, display device and method of fabricating display device
An organic transistor array includes gate electrodes provided on a substrate, source and drain electrodes provided above or below the gate electrodes via a gate insulator layer, and an organic semiconductor layer opposing the gate electrodes via the gate insulator layer, and forming a channel region between mutually adjacent source and drain electrodes. The organic transistor array in a plan view is sectioned into sections each forming a single pixel, and each section has a closest packed structure.
1. An organic transistor array comprising:
a plurality of gate electrodes provided on a substrate surface;
a plurality of source electrodes and a plurality of drain electrodes provided on an opposite side of a gate insulator layer from the plurality of gate electrodes and configured such that portions of the source electrodes are mutually adjacent to portions of the drain electrodes; and
an organic semiconductor layer opposing the plurality of gate electrodes via the gate insulator layer, the organic semiconductor layer being comprised of dried organic semiconductor ink drops each forming a channel region between respective mutually adjacent source electrode portions and drain electrode portions, the dried ink drops spreading over less than all of the respective mutually adjacent source and drain electrode portions,
wherein the organic transistor array in a plan view viewed in a direction perpendicular to the substrate surface is sectioned into a plurality of sections,
each of the sections corresponds to a single pixel, and
the sections are arranged relative to one another so as to have a closest packed arrangement in the plan view.
2. The organic transistor array as claimed in claim 1 , wherein each of the sections has a hexagonal shape in the plan view.
3. The organic transistor array as claimed in claim 1 , wherein the plurality of sections are arranged in a checker board pattern such that a channel region of each section of the plurality of section is aligned with a channel region of a first neighboring section along a first direction but the channel region is not aligned with a second neighboring section along a second direction that perpendicular to the first direction.
4. The organic transistor array as claimed in claim 1 , wherein the organic semiconductor layer is formed by a printed layer.
5. The organic transistor array as claimed in claim 1 , wherein the organic semiconductor layer is made of a material including an organic semiconductor material soluble in an organic solvent.
6. The organic transistor array as claimed in claim 1 , wherein at least one of the plurality of gate electrodes, the plurality of source electrodes and the plurality of drain electrodes is formed by a printed layer.
7. The organic transistor array as claimed in claim 1 , further comprising:
a wettability varying layer provided on the gate insulator layer and made of a material whose surface energy varies depending on energy applied thereto,
said wettability varying layer comprising:
a first surface energy part; and
a second surface energy part having a surface energy higher than that of the first surface energy part by being applied with the energy,
wherein the plurality of source electrodes and the plurality of drain electrodes are provided on the second surface energy part.
8. The organic transistor array as claimed in claim 7 , wherein:
the wettability varying layer includes a first material and a second material;
the first material has an electrical insulation higher than that of the second material; and
the second material has a surface energy which increases at a rate higher than that of the first material when energy is applied thereto.
9. The organic transistor array as claimed in claim 1 , wherein:
the gate insulator layer is formed by a wettability varying layer whose surface energy varies depending on energy applied thereto;
the wettability varying layer comprises a first surface energy part, and a second surface energy part having a surface energy higher than that of the first surface energy part by being applied with the energy,
wherein the plurality of source electrodes and the plurality of drain electrodes are provided on the second surface energy part.
10. The organic transistor array as claimed in claim 9 , wherein:
the wettability varying layer includes a first material and a second material;
the first material has an electrical insulation higher than that of the second material; and
the second material has a surface energy which increases at a rate higher than that of the first material when energy is applied thereto.
11. The organic transistor array as claimed in claim 1 , wherein at least one of the plurality of gate electrodes, the plurality of source electrodes and the plurality of drain electrodes is formed by ink, the ink including metal particles or metal complexes.
12. The organic transistor array as claimed in claim 11 , wherein the metal particles are selected from a group consisting of Au, Ag, Cu, Ni and a combination of two or more metals among Au, Ag, Cu and Ni.
13. The organic transistor array as claimed in claim 1 , wherein at least one of the plurality of gate electrodes, the plurality of source electrodes and the plurality of drain electrodes includes a conductor polymer material.
14. The organic transistor array as claimed in claim 13 , wherein the conductive polymer material includes polyethylene dioxithiophene.
15. The organic transistor array as claimed in claim 1 , wherein the gate insulator layer includes a polymer material.
16. A display device comprising:
an organic transistor array comprising:
a plurality of gate electrodes provided on a substrate surface of a first substrate;
a plurality of source electrodes and a plurality of drain electrodes provided on an opposite side of a gate insulator layer from the plurality of gate electrodes and configured such that portions of the source electrodes are mutually adjacent to portions of the drain electrodes; and
an organic semiconductor layer opposing the plurality of gate electrodes via the gate insulator layer, the organic semiconductor layer being comprised of dried organic semiconductor ink drops each forming a channel region between respective mutually adjacent source electrode portions and drain electrode portions, the dried ink drops spreading over less than all of the respective mutually adjacent source and drain electrode portions,
wherein the organic transistor array in a plan view viewed in a direction perpendicular to the substrate surface is sectioned into a plurality of sections,
each of the sections corresponds to a single pixel, and
the sections are arranged relative to one another so as to have a closest packed arrangement in the plan view; and
a display element array bonded on a surface of the organic transistor array opposite from the first substrate, the display element array comprising:
a plurality of display elements and
a transparent conductor layer provided over the plurality of display elements opposite the first substrate.
17. The display device as claimed in claim 16 , wherein the display elements are selected from a group consisting of electrophoretic elements, liquid crystal elements, and organic electroluminescence elements.
18. The display device as claimed in claim 16 , wherein a stacked structure which includes the organic transistor array and the display element array is flexible.