Capacitor of semiconductor device and method of fabricating the same

1. A capacitor, comprising:

a capacitor top electrode;

a capacitor bottom electrode having a lateral portion aligned with and surrounding three lateral sides of the capacitor top electrode, and a bottom portion aligned with a bottom surface of the capacitor top electrode, wherein the bottom portion has width and length dimensions greater than corresponding width and length dimensions of the lateral portion; and

a capacitor insulating layer between the capacitor top electrode and the capacitor bottom electrode, the capacitor insulating layer contacting an upper surface of the bottom portion of the capacitor bottom electrode.

2. The capacitor as claimed in claim 1 , wherein the capacitor bottom electrode includes a member selected from the group consisting of Al, W, Cu, TiN and TaN.

3. The capacitor as claimed in claim 1 , wherein the capacitor insulating layer includes a member selected from the group consisting of TaO 2 , Al 2 O 3 , and SiN.

4. The capacitor as claimed in claim 1 , wherein the capacitor top electrode includes a member selected from the group consisting of Ru, Pt, TiN, TaN and Al.

5. The capacitor as claimed in claim 1 , wherein the capacitor insulating layer contacts sidewalls of the lateral portion of the capacitor bottom electrode, and the capacitor further comprises an interlayer dielectric layer on part of an upper surface of the bottom portion of the capacitor bottom electrode.

6. A capacitor, comprising:

a capacitor bottom electrode having a bottom section and lateral side sections on the bottom section;

a capacitor insulating layer contacting (i) an upper surface of the bottom section and (ii) the lateral side sections of the capacitor bottom electrode; and

a capacitor top electrode in a cavity defined by the capacitor insulating layer, wherein the bottom section has (i) a width greater than a combined width of the lateral side sections, the capacitor insulating layer, and the capacitor top electrode, and (ii) a length greater than a length of the lateral side sections.

7. The capacitor as claimed in claim 6 , wherein the capacitor bottom electrode includes a member selected from the group consisting of Al, W, Cu, TiN and TaN.

8. The capacitor as claimed in claim 6 , wherein the capacitor insulating layer includes a member selected from the group consisting of TaO 2 , Al 2 O 3 , and SiN.

9. The capacitor as claimed in claim 6 , wherein the capacitor top electrode includes a member selected from the group consisting of Ru, Pt, TiN, TaN and Al.

10. The capacitor as claimed in claim 6 , further comprising an interlayer dielectric layer having lateral side sections contacting part of the upper surface of the bottom section of the capacitor bottom electrode.

11. The capacitor as claimed in claim 10 , wherein the width of the bottom section of the capacitor bottom electrode is greater than a combined width of the lateral side sections of the interlayer dielectric layer.

12. The capacitor as claimed in claim 2 , wherein the capacitor bottom electrode comprises W and TiN.

13. The capacitor as claimed in claim 2 , wherein the capacitor bottom electrode comprises Cu and TaN.

14. The capacitor as claimed in claim 3 , wherein the capacitor insulating layer comprises SiN.

15. The capacitor as claimed in claim 4 , wherein the capacitor top electrode comprises TiN.

16. The capacitor as claimed in claim 15 , wherein the capacitor top electrode further comprises Al.

17. The capacitor as claimed in claim 7 , wherein the capacitor bottom electrode comprises (i) W and TiN or (ii) Cu and TaN.

18. The capacitor as claimed in claim 8 , wherein the capacitor insulating layer comprises SiN.

19. The capacitor as claimed in claim 9 , wherein the capacitor top electrode comprises TiN.

20. The capacitor as claimed in claim 19 , wherein the capacitor top electrode further comprises Al.