IP Library Granted Patent US 8,237,155
Granted Patent B2
US 8,237,155 · App. 12/492,829 · Granted Aug 7, 2012

Selective nanotube formation and related devices

Assignee: The Board of Trustees of the Leland Stanford Junior University
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Quick Facts
Patent No.
US 8,237,155
App. No.
12/492,829
Granted
Aug 7, 2012
Kind
B2
Abstract

Nanotube electronic devices exhibit selective affinity to disparate nanotube types. According to an example embodiment, a semiconductor device exhibits a treated substrate that selectively interacts (e.g., chemically) with nanotubes of a first type, relative to nanotubes of a second type, the respective types including semiconducting-type and metallic-type nanotubes. The selective interaction is used to set device configuration characteristics based upon the nanotube type. This selective-interaction approach can be used to set the type, and/or characteristics of nanotubes in the device.

Claims (32)

1. A nanotube electronic device comprising:

a substrate having a treated surface configured to respectively interact with semiconducting-type nanotubes and with metallic-type nanotubes at different substrate-nanotube interaction strengths;

at least two circuit electrodes; and

a plurality of nanotubes held in place by the treated substrate surface and configured and arranged to electrically connect the electrodes, the nanotubes being of one of the respective semiconducting-type and metallic-type of nanotubes for which substrate-nanotube interaction strength is higher, relative to substrate-nanotube interaction strength for the other one of the types of nanotubes.

2. The device of claim 1 , wherein

the treated surface is configured to interact more strongly with nanotubes having a specific chirality, relative to nanotubes exhibiting a different chirality, and

the plurality of nanotubes exhibit the specific chirality.

3. A nanotube electronic device comprising:

a substrate having a first surface region treated to interact more strongly with semiconducting-type nanotubes, relative to metallic-type nanotubes, and a second surface region treated to interact more strongly with metallic-type nanotubes, relative to semiconducting-type nanotubes,

at least two circuit electrodes;

a plurality of nanotubes held in place by the treated substrate surface and configured and arranged to electrically connect the electrodes, the nanotubes including

a plurality of nanotubes of the semiconducting type held in place by the first surface region, and

a plurality of nanotubes of the metallic type, held in place by the second surface region substrate, and configured and arranged to electrically connect circuit nodes including at least one node that is different from the electrodes connected by the semiconducting-type nanotubes.

4. A nanotube electronic device formed using the steps of:

treating a substrate surface to respectively interact with semiconducting-type nanotubes and with metallic-type nanotubes at different substrate-nanotube interaction strengths;

applying, to the treated surface, a nanotube solution including semiconducting-type nanotubes and metallic-type nanotubes dispersed in a solvent; and

mechanically removing a substantial portion of one of the types of nanotubes for which the substrate-nanotube interaction strength is lower, relative to the substrate-nanotube interaction strength for the other one of the types of nanotubes, to form an electrical connection between electrodes with the nanotubes.

5. An apparatus comprising:

a treated substrate surface configured to interact with semiconducting-type nanotubes and with metallic-type nanotubes at different substrate-nanotube interaction strengths to facilitate, in response to a force applied to nanotubes interacting with the substrate, the removal of a substantial portion of one of the types of nanotubes with which the substrate exhibits a lower interaction strength, relative to the other one of the types of nanotubes.

6. An apparatus comprising:

a treated substrate surface configured and arranged to interact with semiconducting-type nanotubes and with metallic-type nanotubes at different substrate-nanotube interaction strengths to facilitate, in response to a force applied to nanotubes interacting with the substrate, the removal of a substantial portion of one of the types of nanotubes with which the substrate exhibits a lower interaction strength, relative to the other one of the types of nanotubes, the substrate including

a first surface region selectively treated to interact more strongly with one of the nanotube types, relative to an interaction with another of the nanotube types, and

another surface region that exhibits a different interaction with the one of the nanotube types, relative to the interaction exhibited by the first region.

7. An apparatus comprising:

a treated substrate surface configured and arranged to interact with semiconducting-type nanotubes and with metallic-type nanotubes at different substrate-nanotube interaction strengths to facilitate, in response to a force applied to nanotubes interacting with the substrate, the removal of a substantial portion of one of the types of nanotubes with which the substrate exhibits a lower interaction strength, relative to the other one of the types of nanotubes, the substrate including

at least some regions patterned with amine, and

other regions patterned with at least one of a material that exhibits weak interactions with semiconducting-type nanotubes; a material that interacts more strongly with metallic-type nanotubes relative to interactions with semiconducting nanotubes; and a material that does not exhibit relative selectivity to semiconducting or metallic nanotubes.

8. The device of claim 1 , wherein the treated surface is further configured to respectively interact with semiconducting-type nanotubes and with metallic-type nanotubes at different substrate-nanotube interaction strengths to separate the semiconducting-type nanotubes from metallic-type nanotubes dispersed in a solvent.

9. The device of claim 1 , wherein the plurality of nanotubes do not include one of the types of nanotubes for which the substrate-nanotube interaction strength is lower, relative to the substrate-nanotube interaction strength for the other one of the types of nanotubes.

10. The device of claim 1 , wherein the plurality of nanotubes are aligned on the substrate surface.

11. The device of claim 1 , wherein the plurality of nanotubes are aligned on the substrate surface to provide an ascertainable density.

12. The device of claim 1 , wherein the plurality of nanotubes are from a common nanotube solution.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 28, 2011
From: BARMAN, SOUMENDRA
To: THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY
Reel/Frame 026667/0986 →
CONFIRMATORY LICENSE Recorded Aug 11, 2010
From: STANFORD UNIVERSITY
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 024824/0963 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 2, 2009
From: BAO, ZHENAN; LEMIEUX, MELBURNE; OPATKIEWICZ, JUSTIN
To: THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY
Reel/Frame 023322/0243 →
Continuity (2)
Provisional Application 61133789 · Jul 2, 2008
Related Publication 20100001255A1 · Jan 7, 2010