Semiconductor device and manufacturing method therefor
View Patent ↗In a semiconductor having a multilayer wiring structure device on a semiconductor substrate, the multilayer wiring structure includes an interlayer insulating film having at least an organic siloxane insulating film. The organic siloxane insulating film has a relative dielectric constant of 3.1 or less, a hardness of 2.7 GPa or more, and a ratio of carbon atoms to silicon atoms between 0.5 and 1.0, inclusive. Further, the multilayer wiring structure may include an insulating layer having a ratio of carbon atoms to silicon atoms not greater than 0.1, the insulating layer being formed on the top surface of the organic siloxane insulating film as a result of carbon leaving the organic siloxane insulating film.
1. A method for manufacturing a semiconductor device having a multilayer wiring structure, comprising the steps of:
forming a first insulating film on underlayer wiring on a semiconductor substrate;
forming a second insulating film on said first insulating film;
forming a third insulating film on said second insulating film;
dry-etching said third, second, and first insulating films to form an opening reaching said underlayer wiring;
forming a barrier metal film on the inner surface of said opening and on said third insulating film;
forming a conductive layer on said barrier metal film such that said opening is buried under said conductive layer;
removing said conductive layer, said barrier metal film, said third insulating film, and a portion of said second insulating film by use of a chemical mechanical polishing technique such that said conductive layer and said barrier metal film still remain in said opening so as to form upper layer wiring electrically connected to said underlayer wiring; and
applying a reducing plasma treatment to the exposed surface of said second insulating film and the exposed surface of said conductive layer;
wherein said second insulating film forming step includes forming an insulating film under a pressure of 500 Pa or less by use of a plasma CVD technique using alkylalkoxysilane and a nonoxidizing gas as material gases, said alkylalkoxysilane being represented by the following formula:
R w Si x O y (OR′) z ,
where: R and R′ each represent CH 3 ; w, x, and z denote positive integers; y denotes 0 or a positive integer; and (w/x)=2.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein said nonoxidizing gas is at least one selected from the group consisting of helium gas, argon gas, and nitrogen gas.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein said reducing plasma treatment uses plasma including at least one of ammonia and hydrogen.
4. A method for manufacturing a semiconductor device having a multilayer wiring structure, comprising the steps of:
forming a first insulating film on underlayer wiring on a semiconductor substrate;
forming a second insulating film on said first insulating film;
forming a third insulating film on said second insulating film;
dry-etching said third, second, and first insulating films to form an opening reaching said underlayer wiring;
forming a barrier metal film on the inner surface of said opening and on said third insulating film;
forming a conductive layer on said barrier metal film such that said opening is buried under said conductive layer;
removing said conductive layer, said barrier metal film, said third insulating film, and a portion of said second insulating film by use of a chemical mechanical polishing technique such that said conductive layer and said barrier metal film still remain in said opening so as to form upper layer wiring electrically connected to said underlayer wiring; and
applying a reducing plasma treatment to the exposed surface of said second insulating film and the exposed surface of said conductive layer;
wherein said second insulating film forming step includes the steps of:
forming an insulating film having a predetermined thickness under a pressure of 650 Pa or more by use of a plasma CVD technique using alkylalkoxysilane and a nonoxidizing gas as material gases, said alkylalkoxysilane being represented by the following formula:
R w Si x O y (OR′) z ,
where w, x, and z denote positive integers, y denotes 0 or a positive integer, R and R′ each represent CH 3 , and (w/x)=2; and
forming another insulating film after reducing the pressure to 500 Pa or less.
5. The method for manufacturing a semiconductor device according to claim 4 , wherein said nonoxidizing gas is at least one selected from the group consisting of helium gas, argon gas, and nitrogen gas.
6. The method for manufacturing a semiconductor device according to claim 4 , wherein said reducing plasma treatment uses plasma including at least one of ammonia and hydrogen.
7. A method for manufacturing a semiconductor device having a multilayer wiring structure, comprising the steps of:
forming a first insulating film on underlayer wiring on a semiconductor substrate;
forming a second insulating film on said first insulating film;
forming a third insulating film on said second insulating film;
forming a fourth insulating film on said third insulating film;
dry-etching said fourth, third, second, and first insulating films to form an opening reaching said underlayer wiring;
forming a barrier metal film on the inner surface of said opening and on said fourth insulating film;
forming a conductive layer on said barrier metal film such that said opening is buried under said conductive layer;
removing said conductive layer, said barrier metal film, said fourth insulating film, and a portion of said third insulating film by use of a chemical mechanical polishing technique such that said conductive layer and said barrier metal film still remain in said opening so as to form upper layer wiring electrically connected to said underlayer wiring; and
applying a reducing plasma treatment to the exposed surface of said third insulating film and the exposed surface of said conductive layer;
wherein said second insulating film has a lower relative dielectric constant than said third insulating film; and
wherein said third insulating film forming step includes forming an insulating film under a pressure of 500 Pa or less by use of a plasma CVD technique using alkylalkoxysilane and a nonoxidizing gas as material gases, said alkylalkoxysilane being represented by the following formula:
R w Si x O y (OR′) z ,
where: R and R′ each represent CH 3 ; w, x, and z denote positive integers; y denotes 0 or a positive integer; and (w/x)=2.
8. The method for manufacturing a semiconductor device according to claim 7 , wherein said nonoxidizing gas is at least one selected from the group consisting of helium gas, argon gas, and nitrogen gas.
9. The method for manufacturing a semiconductor device according to claim 7 , wherein said reducing plasma treatment uses plasma including at least one of ammonia and hydrogen.