Semiconductor device on direct silicon bonded substrate with different layer thickness
View Patent ↗A Direct Silicon Bonded substrate can include a first substrate and a second substrate in which the second substrate can be rotated to an azimuthal twist angle of 45 degrees in comparison to the first substrate. Disclosed are a semiconductor device and a method for making a semiconductor device that includes a DSB substrate with an adjusted thickness based upon the threshold voltage (Vt). In other words, a thicker substrate or layer can correspond to a high threshold voltage (HVt) and a thinner substrate or layer can correspond to a low threshold voltage (LVt) in order to improve mobility in LVt devices.
1. A semiconductor device, comprising:
a direct Silicon bonded substrate comprising:
a first substrate directly bonded to a second substrate utilizing a direct bonded Silicon technique to create a top layer and a bottom layer in which the top layer is the first substrate and the bottom layer is the second substrate;
the first substrate having a first plane orientation that represents a crystalline direction for a surface of the first substrate;
the second substrate having a second plane orientation that represents a crystalline direction for a surface of the second substrate, wherein the second substrate is twisted to an azimuthal twist angle of 45 degrees between the first plane orientation and the second plane orientation;
the first substrate includes:
a first region with a high threshold voltage (HVt) having a first thickness; and
a second region with a low threshold voltage (LVt) having a second thickness, wherein the first thickness is greater than the second thickness;
wherein an influence of a leakage current is negligible in the second region due to a high source-drain off current leakage and an influence of the leakage current is not negligible in the first region due to a low source-drain off current leakage; and
the second substrate includes a region between the first region and the second region.
2. The semiconductor device according to claim 1 , wherein the first region is a PFET region and the second region is a PFET region.
3. The semiconductor device according to claim 1 , wherein the region included with the second substrate is a NFET region.