Granted Patent B2

US 9,209,776 · App. 12/494,886 · Granted Dec 8, 2015

Abstract

Claims (13)

1. A method of fabricating an electrical resonator, the method comprising:

forming a cavity in a substrate;

providing a layer of sacrificial material in the cavity;

forming a resonator stack over the cavity, the forming of the resonator stack comprising forming a temperature compensation layer comprising borosilicate glass (BSG), wherein a concentration of boron in the BSG layer is in the range of approximately 0.1% to approximately 5.0% atomic mass percentage or weight percentage; and

removing the sacrificial material from the cavity.

2. The method as claimed in claim 1 , wherein the forming the temperature compensation layer comprises forming a mixture of silicon dioxide and boron, and depositing the mixture in a vacuum.

3. The method as claimed in claim 1 , further comprising patterning the temperature compensation layer within a boundary of the first electrode or substantially coincident with the boundary.

4. The method as claimed in claim 1 , wherein the temperature compensation layer is disposed between a first electrode and a piezoelectric layer of the resonator stack.

5. The method as claimed in claim 1 , wherein the temperature compensation layer is disposed between a second electrode and a piezoelectric layer of the resonator stack.

6. The method as claimed in claim 1 , wherein the temperature compensation layer is disposed over the substrate and beneath a first electrode of the resonator stack.

7. The method as claimed in claim 1 , wherein the temperature compensation layer is disposed over a second electrode of the resonator stack.

8. The method as claimed in claim 1 , wherein the temperature compensation layer has a thickness in the range of approximately 500 Å to approximately 2000 Å.

9. The method as claimed in claim 1 , wherein the temperature compensation layer has a thickness in the range of approximately 200 Å to approximately 10000 Å.

Assignments (8)