Methods for depositing high-K dielectrics

1. A method for forming a film stack comprising:

depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium;

applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal;

depositing a titanium oxide layer on the exposed metal using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer comprises at least a portion rutile titanium oxide; and

annealing the capacitor using a rapid thermal oxidation (RTO) process of at least approximately 600° C.

2. The method of claim 1 , wherein applying the oxygen plasma comprises using one of a high density plasma and an atmospheric plasma.

3. The method of claim 1 , wherein the titanium oxide layer has an X-Ray Diffraction peak associated with rutile titanium oxide.

4. The method of claim 1 , wherein depositing the first electrode comprises depositing platinum using physical vapor deposition (PVD) with a pedestal temperature greater than 250° Celsius.

5. The method of claim 4 , further comprising depositing the first electrode using PVD with a working gas having an oxygen partial pressure of greater than 10 percent.

6. The method of claim 1 , wherein depositing the first electrode comprises depositing a platinum electrode having a [111] crystal orientation.

7. The method of claim 1 , further comprising depositing a second electrode over the titanium oxide layer to form a capacitor.

8. The method of claim 7 , wherein the capacitor is part of a dynamic random access memory (DRAM) cell.

9. A method for forming a film stack comprising:

depositing a platinum electrode on a substrate using physical vapor deposition (PVD) with a pedestal temperature of greater than 250° C. and a working gas having an oxygen partial pressure of greater than 10 percent;

treating the electrode using an oxygen plasma;

depositing a titanium oxide layer on the electrode, wherein the titanium oxide layer is at least a portion rutile titanium oxide;

doping the titanium oxide layer with at least one of yttrium oxide and aluminum oxide.

10. The method of claim 9 , further comprising annealing the film stack using a rapid thermal oxidation (RTO) process of at least approximately 600° C.

11. The method of claim 9 , further comprising:

depositing a second electrode over the metal oxide layer, wherein the second electrode is one of platinum and ruthenium to form a capacitor structure.

12. The method of claim 11 , wherein the capacitor structure comprises a dynamic random access memory (DRAM) cell.

13. The method of claim 9 , wherein treating comprises using one of a high density plasma and an atmospheric plasma.

14. The method of claim 9 , wherein the titanium oxide layer includes an X-ray diffraction peak associated with rutile titanium oxide.

15. The method of claim 9 , wherein the pedestal temperature is between 250° and 300° C.

16. The method of claim 9 , wherein the pedestal temperature is approximately 300° C.

17. The method of claim 9 , wherein the oxygen partial pressure is greater than 20 percent.

18. A method for forming a film stack comprising:

depositing a platinum electrode on a substrate using physical vapor deposition (PVD) with a pedestal temperature of greater than 250° C. and a working gas having an oxygen partial pressure of greater than 10 percent;

treating the electrode using an oxygen plasma; and

depositing a titanium oxide layer on the electrode, wherein the titanium oxide layer is at least a portion rutile titanium oxide; and

annealing the film stack using a rapid thermal oxidation (RTO) process of at least approximately 600° C.

19. The method of claim 18 , wherein treating comprises using one of a high density plasma and an atmospheric plasma.

20. The method of claim 19 , wherein the titanium oxide layer includes an X-ray diffraction peak associated with rutile titanium oxide.