Nitride based semiconductor device using nanorods and process for preparing the same
View Patent ↗Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.
1. A process for preparing a nitride based semiconductor device, comprising the steps of:
forming a plurality of nanorods aligned in the vertical direction on a silicon substrate;
forming an amorphous matrix layer filling spaces between the nanorods so as to expose some upper portion of the nanorods from the upper surface of the amorphous matrix layer; and
growing a GaN layer on the amorphous matrix layer so as to cover the amorphous matrix layer and filling spaces between the exposed upper portions of the nanorods using some of the upper portions thereof as seeds.
2. The process as set forth in claim 1 , further comprising:
forming a ZnO buffer layer on the silicon substrate prior to forming a plurality of nanorods.
3. The process as set forth in claim 1 , further comprising:
separating the silicon substrate, nanorods and amorphous matrix layer from the GaN layer.
4. The process as set forth in claim 3 , wherein the separation step is performed by wet etching the nanorods and matrix layer.
5. The process as set forth in claim 1 , wherein the step of forming the nanorods is performed using Metal Organic Chemical Vapor Deposition (MOCVD).
6. The process as set forth in claim 5 , wherein in the step of forming the nanorods, diethylzinc (DEZn) and oxygen gas are used to form the nanorods.
7. The process as set forth in claim 6 , wherein the step of forming the nanorods is performed at a temperature of 400 to 500° C.
8. The process as set forth in claim 1 , wherein the step of growing the GaN layer is performed at a temperature of more than 1100° C. and a pressure of 10 to 300 Torr.
9. The process as set forth in claim 1 , wherein the step of forming an amorphous matrix layer is performed prior to the step of growing the GaN layer.
10. The process as set forth in claim 1 , wherein the GaN layer is grown such that the nanorods are buried in the GaN layer.