Method for the production of photo-patterned carbon electronics
View Patent ↗A method for the manufacture of carbon based electrical components is herein presented. In the method a wafer substrate is provided upon which a first layer of carbon based semiconductor is deposited. The first layer of carbon based semiconductor is introduced to a first doping agent precursor and the first doping agent precursor and first layer of carbon based semiconductor are irradiated with light having a wavelength in the ultraviolet spectrum thereby selectively doping areas of the first layer of carbon based semiconductor.
1. A method for the production of carbon based electrical components, said method comprising:
providing a wafer substrate;
depositing upon said wafer substrate a first layer of carbon based semiconductor;
introducing said first layer of carbon based semiconductor to a first doping agent precursor; and
irradiating said first doping agent precursor and said first layer of carbon based semiconductor with light having a wavelength in the ultraviolet spectrum thereby selectively doping areas of said first layer of carbon based semiconductor.
2. The method according to claim 1 wherein said method further comprises:
depositing a second layer of carbon based semiconductor upon said first layer of carbon based semiconductor;
introducing said second layer of carbon based semiconductor to said first doping agent precursor; and
irradiating said first doping agent precursor and said second layer of carbon based semiconductor thereby selectively doping areas of said second layer of carbon based semiconductor.
3. The method according to claim 1 wherein said first doping agent precursor is selected from the group of doping precursors consisting of COF.sub.2, CF.sub.2Cl.sub.2, CF.sub.2Br.sub.2, CF.sub.3Br, CF.sub.3I, CF.sub.3NO, CO(CF.sub.3), Cesium, Potassium, Hydrogen, Oxygen, Fluorine dimer, Chlorine dimer, and Iodine dimer.
4. The method according to claim 1 further comprising the steps of:
introducing said first layer of carbon based semiconductor to a second doping agent precursor; and
introducing said second doping agent precursor and said first layer of carbon based semiconductor with a laser thereby selectively doping areas of said first layer of carbon based semiconductor.
5. The method according to claim 1 wherein said first carbon layer is comprised of a carbon layer having a structure selected from the group of structures consisting of graphene, diamond-like carbon, single walled nanotube mats; sp2 bonded carbon molecules, and carbon molecules having both sp2 and sp3 bonded carbon centers.
6. The method according to claim 1 further comprising the step of:
depositing and irradiating a plurality of carbon layers.
7. The method according to claim 1 further comprising the steps of:
selecting a photolithography mask having a desired doping pattern; and
disposing said photolithography mask between said light and said first layer.
8. The method according to claim 4 wherein said second doping agent precursor is selected from the group of doping precursors consisting of COF.sub.2, CF.sub.2Cl.sub.2, CF.sub.2Br.sub.2, CF.sub.3Br, CF.sub.3I, CF.sub.3NO, CO(CF.sub.3), Cesium, Potassium, Hydrogen, Oxygen, Fluorine dimer, Chlorine dimer, and Iodine dimer.
9. A method for the production of carbon based electrical components, said method comprising:
providing a wafer substrate;
depositing upon said wafer substrate a first layer of carbon based semiconductor;
introducing said first layer of carbon based semiconductor to a first doping agent precursor;
irradiating said first doping agent precursor and said first layer of carbon based semiconductor with light having a wavelength in the ultraviolet spectrum thereby selectively doping areas of said first layer of carbon based semiconductor;
depositing a second layer of carbon based semiconductor upon said first layer of carbon based semiconductor;
introducing said second layer of carbon based semiconductor to said first doping agent precursor; and
irradiating said first doping agent precursor and said second layer of carbon based semiconductor thereby selectively doping areas of said second layer of carbon based semiconductor.
10. The method according to claim 9 wherein said first doping agent precursor is selected from the group of doping precursors consisting of COF.sub.2, CF.sub.2Cl.sub.2, CF.sub.2Br.sub.2, CF.sub.3Br, CF.sub.3I, CF.sub.3NO, CO(CF.sub.3), Cesium, Potassium, Hydrogen, Oxygen, Fluorine dimer, Chlorine dimer, and Iodine dimer.
11. The method according to claim 9 further comprising the steps of:
introducing said first layer of carbon based semiconductor to a second doping agent precursor; and
irradiating said second doping agent precursor and said first layer of carbon based semiconductor with a laser thereby selectively doping areas of said first layer of carbon based semiconductor.
12. The method according to claim 11 wherein said second doping agent precursor is selected from the group of doping precursors consisting of COF.sub.2, CF.sub.2Cl.sub.2, CF.sub.2Br.sub.2, CF.sub.3Br, CF.sub.3I, CF.sub.3NO, CO(CF.sub.3), Cesium, Potassium, Hydrogen, Oxygen, Fluorine dimer, Chlorine dimer, and Iodine dimer.
13. The method according to claim 9 wherein said first carbon layer is comprised of a carbon layer having a structure selected from the group of structures consisting of graphene, diamond-like carbon, single walled nanotube mats; sp2 bonded carbon molecules, and carbon molecules having both sp2 and sp3 bonded carbon centers.
14. The method according to claim 9 further comprising the step of:
depositing and irradiating a plurality of carbon layers.
15. The method according to claim 9 further comprising the steps of:
selecting a photolithography mask having a desired doping pattern; and
disposing said photolithography mask between said light and said first layer.