Quantum dot laser diode and method of manufacturing the same
Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved.
1. A quantum dot laser diode, comprising:
a grating structure layer formed on a substrate and including a plurality equally spaced gratings within the grating structure layer, wherein the plurality of gratings are configured to inject photons and lead a stimulated emission to the top of the grating structure layer;
a first lattice-matched layer formed on the grating structure layer;
at least one quantum dot layer formed on the first lattice-matched layer and including at least one quantum dot;
a second lattice-matched layer formed on the quantum dot layer;
a cladding layer formed on the second lattice-matched layer; and
an ohmic contact layer formed on the cladding layer.
2. The quantum dot laser diode of claim 1 , wherein the substrate is one of an InP substrate and a GaAs substrate.
3. The quantum dot laser diode of claim 1 , wherein the quantum dot is formed of In(Ga)As.
4. The quantum dot laser diode of claim 1 , wherein the first and second lattice-matched layers are formed of a group III-V compound.
5. The quantum dot laser diode of claim 1 , wherein the first and second lattice-matched layers have a separate confinement hetero (SCH) structure having a SPIN or GRIN-shaped waveguide.
6. The quantum dot laser diode of claim 1 , wherein the cladding layer is one of an InAl(Ga)As cladding layer and an In(Ga,As)P cladding layer.
7. The quantum dot laser diode of claim 1 , wherein the second lattice-matched layer is the same as the first lattice-matched layer in structure and function.
8. A quantum dot laser diode, comprising:
a substrate;
a first cladding layer on the substrate, the first cladding layer including a plurality of equally spaced gratings within the first cladding layer, wherein the plurality of gratings are configured to inject photons and lead a stimulated emission to the top of the first cladding layer;
a first lattice-matched layer on the first cladding layer; and
a quantum dot layer on the first lattice-matched layer, the quantum dot layer including a plurality of quantum dots.
9. The quantum dot laser diode of claim 8 , further comprising a second lattice-matched layer on the quantum dot layer.
10. The quantum dot laser diode of claim 9 , further comprising:
a second cladding layer on the second lattice-matched layer; and
an ohmic contact layer on the second cladding layer.
11. The quantum dot laser diode of claim 8 , wherein the first lattice-matched layer has a heterojunction structure comprising two material layers of a group III-V compound.
12. The quantum dot laser diode of claim 8 , wherein the plurality of quantum dots are formed a predetermined intervals in a quantum dot structure.
13. The quantum dot laser diode of claim 8 , wherein the quantum dot layer comprises a plurality of quantum dot sub layers, each having a plurality of quantum dots.
14. The quantum dot laser diode of claim 9 , wherein the first and second lattice-matched layers have the same lattice structure.