Method for use in making electronic devices having thin-film magnetic components
View Patent ↗Disclosed herein is a method of forming electronic device having thin-film components by using trenches. One or more of thin-film components is formed by depositing a thin-film in the trench followed by processing the deposited thin-film to have the desired thickness.
1. A method, comprising:
providing a substrate;
forming a trench, comprising:
depositing a trench layer on the substrate; and
forming the trench in the trench layer;
forming a plurality of thin-film components of a device in the trench, wherein the plurality of thin-film components comprises at least a magnetic thin-film component, comprising:
depositing the plurality of thin-film components in the trench and on the trench layer; and
processing the deposited thin-film components by removing a portion of the deposited layers on the trench layer such that the thin-film components within the trench have a desired thickness, wherein the device is a magnetic-random-access memory cell that comprises a magnetic tunnel junction that comprises a tunnel junction layer positioned between a free magnetic layer and a fixed magnetic layer, the substrate comprises the fixed magnetic layer and the tunnel junction layer; and wherein the trench layer is comprised of a dielectric material; and wherein the stack of thin-film components within the trench comprises the free magnetic layer.
2. The method of claim 1 , wherein the stack of thin-film components in the trench has a lateral characteristic dimension of 100 nanometers or less.
3. The method of claim 1 , wherein the stack of thin-film components in the trench has a lateral characteristic dimension of 45 nanometers or less.
4. The method of claim 1 , wherein the stack of thin-film components further comprises a thermal barrier for preventing thermal leakage from the free magnetic layer.
5. A method, comprising:
providing a substrate;
forming a trench, comprising:
depositing a trench layer on the substrate; and
forming the trench in the trench layer;
forming a plurality of thin-film components of a device in the trench, wherein the plurality of thin-film components comprises at least a magnetic thin-film component, comprising:
depositing the plurality of thin-film components in the trench and on the trench layer; and
processing the deposited thin-film components by removing a portion of the deposited layers on the trench layer such that the thin-film components within the trench have a desired thickness, wherein at least one of the thin-film components within the trench is positioned on top of at least another one of the thin-film components within the trench, wherein the device is a magnetic-random-access memory cell that comprises a magnetic tunnel junction that comprises a tunnel junction layer positioned between a free magnetic layer and a fixed magnetic layer, wherein the magnetic tunnel junction is substantially within the trench, wherein the step of providing the substrate comprises:
providing a sacrificial substrate;
forming another trench, comprising;
depositing another trench layer on said sacrificial substrate; and
forming the another trench in said the another trench layer;
forming a plurality of thin-film components of the device in the another trench, comprising;
depositing a plurality of thin films in the another trench and on the sacrificial substrate; and
removing at least a portion of the deposited thin-film components and said the another trench layer such that the thin-film components within said the another trench has a desired thickness.
6. A method, comprising:
providing a substrate;
forming a trench, comprising:
depositing a trench layer on the substrate; and
forming the trench in the trench layer;
forming a plurality of thin-film components of a device in the trench, wherein the plurality of thin-film components comprises at least a magnetic thin-film component, comprising:
depositing the plurality of thin-film components in the trench and on the trench layer; and
processing the deposited thin-film components by removing a portion of the deposited layers on the trench layer such that the thin-film components within the trench have a desired thickness, wherein the device is a magnetic-random-access memory cell that comprises a magnetic tunnel junction that comprises a tunnel junction layer positioned between a free magnetic layer and a fixed magnetic layer, the substrate comprises the free magnetic layer and the tunnel junction layer; and wherein the trench layer is comprised of a dielectric material; and wherein the stack of thin-film components within the trench comprises the fixed magnetic layer.
7. The method of claim 6 , wherein the trench has a lateral characteristic dimension of 65 nanometers or less.
8. The method of claim 6 , wherein the trench has a sloped sidewall.