Patent Assignment
Reel/Frame 066350/0669
Assignment of Assignor's Interest
Recorded: 2024-01-18
Pages: 60
Assignor
CROCUS TECHNOLOGY SA
Executed: 2024-01-01
Assignee
ALLEGRO MICROSYSTEMS, LLC
955 PERIMETER ROAD, MANCHESTER, NEW HAMPSHIRE, 03103-3353
Covered Properties
(168)
Current Re-Routing Scheme for Serial-Programmed Mram
Method and Device to Detect the Likely Onset of Thermal Relaxation in Magnetic Data Storage Devices
Magnetic Memory Architecture with Shared Current Line
Method and Device for Improved Magnetic Field Generation During a Write Operation of a Magnetoresistive Memory Device
Tamper Resistant Packaging and Approach
Method and Device for Protection of an Mram Device Against Tampering
Hardware Security Device for Magnetic Memory Cells
Memory Controller and Method for Writing to a Memory
Tamper-Resistant Packaging and Approach Using Magnetically-Set Data
Mram Architecture for Low Power Consumption and High Selectivity
Simultaneous Reading from and Writing to Different Memory Cells
Integrity Control for Data Stored in a Non-Volatile Memory
Compensating a Long Read Time of a Memory Device in Data Comparison and Write Operations
Active Shielding for a Circuit Comprising Magnetically Sensitive Materials
Magnetic Field Shaping Conductor
Non-Homogeneous Shielding of an Mram Chip with Magnetic Field Sensor
Method and Device for Performing Active Field Compensation During Programming of a Magnetoresistive Memory Device
Data Retention Indicator for Magnetic Memories
Method and Device for Preventing Erroneous Programming of a Magnetoresistive Memory Element
Thermally Stable Reference Voltage Generator for Mram
System and Method for Providing Content-Addressable Magnetoresistive Random Access Memory Cells
Magnetic Tunnel Junction Magnetic Memory
Nanowire Magnetic Random Access Memory
Magnetic Element with Thermally-Assisted Writing
Active Shielding for a Circuit Comprising Magnetically Sensitive Materials
System and Method for Providing Content-Addressable Magnetoresistive Random Access Memory Cells
System and Method for Writing Data to Magnetoresistive Random Access Memory Cells
System and Method for Providing Content-Addressable Magnetoresistive Random Access Memory Cells
Magnetic Random Access Memory with an Elliptical Magnetic Tunnel Junction
Shared Line Magnetic Random Access Memory Cells
Method for Use in Making Electronic Devices Having Thin-Film Magnetic Components
Magnetic Element with a Fast Spin Transfer Torque Writing Procedure
Ternary Content Addressable Magnetoresistive Random Access Memory Cell
Active Strap Magnetic Random Access Memory Cells Configured to Perform Thermally-Assisted Writing
Method and Device for Protection of an Mram Device Against Tampering
Thermally Stable Reference Voltage Generator for Mram
Magnetic Memory with a Thermally Assisted Writing Procedure and Reduced Writing Field
Magnetic Memory with a Thermally Assisted Spin Transfer Torque Writing Procedure Using a Low Writing Current
Non-Volatile Logic Devices Using Magnetic Tunnel Junctions
Magnetic Memory with a Thermally Assisted Writing Procedure
Ultimate Magnetic Random Access Memory-Based Ternary Cam
Self-Referenced Magnetic Random Access Memory Cells
Magnetic Element with Thermally Assisted Writing
Circuit for Generating Adjustable Timing Signals for Sensing a Self-Referenced Mram Cell
Magnetic Tunnel Junction Structure
Magnetic Random Access Memory Cells Having Improved Size and Shape Characteristics
Memory Devices with Series-Interconnected Magnetic Random Access Memory Cells
Magnetic Random Access Memory Devices Configured for Self-Referenced Read Operation
Mram-Based Memory Device with Rotated Gate
Magnetic Device with Optimized Heat Confinement
Method for Writing in a Mram-Based Memory Device with Reduced Power Consumption
Magnetic Random Access Memory Devices Including Multi-Bit Cells
Magnetic Random Access Memory Devices Including Multi-Bit Cells
Magnetic Random Access Memory Devices Including Shared Heating Straps
Magnetic Random Access Memory Devices Including Heating Straps
Multilevel Magnetic Element
Thermally Assisted Magnetic Random Access Memory Element with Improved Endurance
Apparatus, System, and Method for Matching Patterns with an Ultra Fast Check Engine
Apparatus, System, And Method For Matching Patterns With An Ultra Fast Check Engine Based On Flash Cells
Multibit Magnetic Random Access Memory Cell with Improved Read Margin
Magnetic Tunnel Junction Comprising a Polarizing Layer
Low Power Magnetic Random Access Memory Cell
Magnetic Random Access Memory Cell with a Dual Junction for Ternary Content Addressable Memory Applications
Information Processing Device Comprising a Read-Only Memory and a Method for Patching the Read-Only Memory
Method for Use in Making Electronic Devices Having Thin-Film Magnetic Components
Multibit Cell with Synthetic Storage Layer
Magnetic Random Access Memory Cell with Improved Dispersion of the Switching Field
Method of Counter-Measuring Against Side-Channel Attacks
Memory Array Including Magnetic Random Access Memory Cells and Oblique Field Lines
Magnetic Tunnel Junction with an Improved Tunnel Barrier
Magnetic Random Access Memory (Mram) Cell, Method for Writing and Reading the Mram Cell Using a Self-Referenced Read Operation
Application:
13/622,513 →
Publication:
US 2013/0077390
Self-Reference Magnetic Random Access Memory (Mram) Cell Comprising Ferrimagnetic Layers
Apparatus, System, and Method for Writing Multiple Magnetic Random Access Memory Cells with a Single Field Line
Memory Devices with Magnetic Random Access Memory (MRAM) Cells and Associated Structures for connecting the MRAM Cells
Self-Referenced Mram Cell with Optimized Reliability
Self-Referenced Magnetic Random Access Memory Element Comprising a Synthetic Storage Layer
Self-Referenced Mram Cell and Method for Writing the Cell Using a Spin Transfer Torque Write Operation
MRAM Cell and Method for Writing to the MRAM Cell using a Thermally Assisted Write Operation with a Reduced Field Current
Self-Referenced Mram Element with Linear Sensing Signal
High Speed Magnetic Random Access Memory-Based Ternary Cam
Magnetic Logic Units Configured as an Amplifier
Magnetic Logic Units Configured to Measure Magnetic Field Direction
Method for Use in Making Electronic Devices Having Thin-Film Magnetic Components
Multilevel Magnetic Element
Magnetic Random Access Memory Cells with Isolating Liners
Self-Referenced Magnetic Random Access Memory
Method for Writing to a Random Access Memory (Mram) Cell with Improved Mram Cell Lifespan
Mram Element Having Improved Data Retention and Low Writing Temperature
Magnetic Logic Unit (Mlu) Cell and Amplifier Having a Linear Magnetic Signal
Magnetic Logic Unit (Mlu) Cell and Amplifier Having a Linear Magnetic Signal
Self-Referenced Mram Element and Device Having Improved Magnetic Field
Thermally Assisted Multi-Level Mram Cell and Method for Writing a Plurality of Bits in the Mram Cell
Memory Devices with Magnetic Random Access Memory (Mram) Cells and Associated Structures for Connecting the Mram Cells
Magnetic Logic Units Configured to Measure Magnetic Field Direction
Magnetic Logic Units Configured to Measure Magnetic Field Direction
Magnetic Logic Units Configured to Measure Magnetic Field Direction
Magnetic Logic Units Configured to Measure Magnetic Field Direction
Multibit Self-Reference Thermally Assisted Mram
Structure for Thermally Assisted Mram
Magnetic Logic Units Configured as Analog Circuit Building Blocks
Analog Circuits Incorporating Magnetic Logic Units
Magnetic Random Access Memory (Mram) Cell with Low Power Consumption
Magnetoresistive Element with Oxygen Getting Layer Having Enhanced Exchange Bias and Thermal Stability for Spintronic Devices
Self-Referenced Magnetic Random Access Memory (Mram) and Method for Writing to the Mram Cell with Increased Reliability and Reduced Power Consumption
Magnetic Random Access Memory Cell with a Dual Junction for Ternary Content Addressable Memory Applications
Thermally Assisted Mram Including Magnetic Tunnel Junction and Vacuum Cavity
Patent:
9,324,937 →
Application:
14/666,363 →
Thin Film Encapsulation for Thin Film Batteries and Other Devices
Serial Magnetic Logic Unit Architecture
Mram Element with Low Writing Temperature
Self-Referenced Mram Cell That Can Be Read with Reduced Power Consumption
Thermally-Assisted Mram Cells with Improved Reliability at Writing
Apparatus and Method for Sensing a Magnetic Field Using Arrays of Magnetic Sensing Elements
Apparatus and Method for Sensing a Magnetic Field Using Subarrays of Magnetic Field Sensing Elements for High Voltage Applications
Apparatus and Method for Sensing a Magnetic Field Using Subarrays of Magnetic Sensing Elements
Apparatus and Method for Layout of Magnetic Field Sensing Elements in Sensors
Apparatus, System, and Method for Sensing Communication Signals with Magnetic Field Sensing Elements
Apparatus and Method for Magnetic Sensor Based Surface Shape Analysis
Apparatus and Method for Magnetic Sensor Based Surface Shape Analysis Spatial Positioning in a Uniform Magnetic Field
Self-Referenced Memory Device and Method Using Spin-Orbit Torque for Reduced Size
Method for Measuring Three-Dimensional Magnetic Fields
Magnetic Sensor Cell for Measuring Three-Dimensional Magnetic Fields
Method for Writing to a Mram Device Configured for Self-Referenced Read Operation with Improved Reproducibly
MRAM-Based Pre-Distortion Linearization and Amplification Circuits
Magnetic Random Access Memory Cell with a Dual Junction for Ternary Content Addressable Memory Applications
Multi-Bit Mram Cell and Method for Writing and Reading to Such Mram Cell
Self-Referenced Multibit Mram Cell Having a Synthetic Antiferromagnetic Storage Layer
Mlu Based Accelerometer Using a Magnetic Tunnel Junction
Magnetic Sensor Cell for Measuring One- and Two-Dimensional Magnetic Fields and Method for Measuring Said Magnetic Fields Using the Magnetic Sensor Cell
Electrical Interconnecting Device for Mram-Based Magnetic Devices
Method for Writing in a Magnetic Device Having a Plurality of Magnetic Logical Unit Cells Using a Single Programming Current
Self-Referenced Mram Cell and Magnetic Field Sensor Comprising the Self-Referenced Mram Cell
Mlu Cell for Sensing an External Magnetic Field and a Magnetic Sensor Device Comprising the Mlu Cell
Mlu Based Magnetic Sensor Having Improved Programmability and Sensitivity
Magnetic Logic Unit (Mlu) Cell for Sensing Magnetic Fields with Improved Programmability and Low Reading Consumption
Mram-Based Programmable Magnetic Device for Generating Random Numbers
Logic Gate Module for Performing Logic Functions Comprising a Mram Cell and Method for Operating the Same
Magnetic Device Configured to Perform an Analog Adder Circuit Function and Method for Operating Such Magnetic Device
Multibit Self-Reference Thermally Assisted Mram
Magnetic Memory Device That Is Protected Against Reading Using an External Magnetic Field and Method for Operating Such Magnetic Memory Device
Mram Reference Cell with Shape Anisotropy to Establish a Well-Defined Magnetization Orientation Between a Reference Layer and a Storage Layer
Magnetoresistive Element Having an Adjustable Magnetostriction and Magnetic Device Comprising the Magnetoresistive Element
Magnetoresistive-Based Signal Shaping Circuit for Audio Applications
Apparatus and Method for Magnetic Sensor Output Compensation Based Upon Ambient Temperature
Apparatus for Generating a Magnetic Field and Method of Using Said Apparatus
Magnetic Reader Sensor Device for Reading Magnetic Stripes and Method for Manufacturing the Sensor Device
Mlu-Based Magnetic Device Having an Authentication and Physical Unclonable Function and Authentication Method Using Said Mlu Device
Reader Device for Reading Information Stored on a Magnetic Strip and a Method for Decoding the Read Information
Magnetic Angular Sensor Device for Sensing High Magnetic Fields with Low Angular Error
Magnetoresistive-Based Sensing Circuit for Two-Dimensional Sensing of High Magnetic Fields
Electronic Circuit for Measuring an Angle and an Intensity of an External Magnetic Field
Magnetic Field Sensor for Sensing a Two-Dimensional External Magnetic Field Having a Low Anisotropy Field
Magnetic Current Sensor Comprising a Magnetoresistive Differential Full Bridge
Magnetic Element Having an Improved Measurement Range
Magnetoresistive Sensor Element Having Compensated Temperature Coefficient of Sensitivity and Method for Manufacturing Said Element
Temperature Compensated Mtj-Based Sensing Circuit for Measuring an External Magnetic Field
Magnetic Sensor for Measuring an External Magnetic Field Angle in a Two-Dimensional Plane and Method for Measuring Said Angle Using the Magnetic Sensor
Application:
17/905,278 →
Publication:
US 2023/0134728
Magnetoresistive Sensor Element for Sensing a Two-Dimensional Magnetic Field with Low High-Field Error
Magnetic Sensor Element and Device Having Improved Accuracy Under High Magnetic Fields
Magnetic Sensor Comprising Magnetoresistive Elements and System for Programming Such Magnetic Sensor
Magnetoresistive Element for a 2D Magnetic Sensor Having a Reduced Hysteresis Response
Magnetoresistive Sensor Element Having a Wide Linear Response and Robust Nominal Performance and Manufacturing Method Thereof
Magnetoresistive Element for Sensing a Magnetic Field in a Z-Axis
Magnetoresistive Element and Magnetic Sensor Device Having a High Sensitivity and Low Zero-Field Offset-Shift
Magnetic Sensor Device Having an Improved Measurement Range
Method to Calculate Performance of a Magnetic Element Comprising a Ferromagnetic Layer Exchange-Coupled to an Antiferromagnetic Layer
Application:
18/555,075 →
Publication:
US 2024/0210498
System and Method for Providing Content-Addressable Magnetoresistive Random Access Memory Cells
Application:
60/828,438 →
System and Method for Writing Data to Magnetoresistive Random Access Memory Cells
Application:
61/043,038 →
Magnetic Tunnel Junction Structure
Application:
61/260,527 →
Related Assignments
(11)
Other recorded transfers of the patents in this record — the chain of ownership.
Release of Security Interest
Apr 9, 2018
From: KREOS CAPITAL IV (LUXEMBOURG) SARL
To: CROCUS TECHNOLOGY, INC.
Reel/Frame 045871/0622 →
Release of Security Interest
Apr 9, 2018
From: KREOS CAPITAL IV (LUXEMBOURG) SARL
To: CROCUS TECHNOLOGY, INC.
Reel/Frame 045865/0555 →
Security Interest
Apr 13, 2018
From: CROCUS TECHNOLOGY, INC.
To: LLC "SBERBANK INVESTMENTS"
Reel/Frame 045938/0810 →
Release of Security Interest
Sep 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050315/0785 →
Patent Security Agreement
Oct 9, 2020
From: NAUTILUS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 054036/0328 →
Release of Security Interest
Aug 30, 2023
From: LLC "SBERBANK INVESTMENTS"
To: CROCUS TECHNOLOGY, INC.
Reel/Frame 064783/0420 →
Corrective Assignment to Correct the the Spelling of the Conveying Party Name and Address on the Document. Previously Recorded at Reel: 02722 Frame: 0049. Assignor(S) Hereby Confirms the Assignment.
Oct 25, 2023
From: CROCUS TECHNOLOGY INC.
To: NXP B.V.
Reel/Frame 065345/0304 →
Corrective Assignment to Correct the Typographical Error in the Name of the Receiving Party and to Update the Address of the Receiving Party Previously Recorded at Reel: 028092 Frame: 0605. Assignor(S) Hereby Confirms the Assignment.
Oct 25, 2023
From: NXP B.V.
To: CROCUS TECHNOLOGY INC.
Reel/Frame 065350/0786 →
Release of Security Interest
Oct 25, 2023
From: NXP B.V.
To: CROCUS TECHNOLOGY INC.
Reel/Frame 065334/0488 →
Assignment of Assignor's Interest
Oct 26, 2023
From: NXP B.V.
To: CROCUS TECHNOLOGY INC.
Reel/Frame 065363/0587 →
Assignment of Assignor's Interest
Dec 28, 2023
From: CROCUS TECHNOLOGY INC.
To: CROCUS TECHNOLOGY SA
Reel/Frame 066157/0629 →