Method and device for preventing erroneous programming of a magnetoresistive memory element
View Patent ↗An array of magnetoresistive memory elements includes a magnetic field sensor for measuring an external magnetic field in the vicinity of the magnetoresistive memory elements. The sensor provides input to enable/disable circuitry that functions to temporarily disable any programming operation when the measured external magnetic field exceeds a threshold value.
1. An array of magnetoresistive memory elements comprising:
a magnetic field sensor unit for measuring an external magnetic field in the vicinity of the magnetoresistive memory elements, the magnetic field sensor unit generating an output signal representative of the measured external magnetic field;
disable circuitry responsive to the output signal to temporarily disable programming operation when the measured external magnetic field exceeds a threshold value; and
a memory buffer to store incoming data while programming operations are temporarily disabled.
2. An array according to claim 1 , wherein the magnetic field sensor unit comprises a plurality of magnetic field sensors.
3. An array according to claim 1 , wherein the magnetic field sensor unit is an analog sensor unit.
4. An array according to claim 1 , wherein the magnetic field sensor unit is an element of the same construction as the magnetoresistive memory elements.
5. An array according to claim 4 , wherein the magnetic field sensor unit is more sensitive to magnetic fields than the magnetoresistive memory elements.
6. An array according to claim 1 , furthermore comprising driving circuitry for driving the memory elements of the array.
7. An array according to claim 1 , furthermore comprising a temperature measurement unit for measuring temperature in the vicinity of the magnetoresistive memory elements, wherein the disable circuitry is adapted to disable any programming operation when the measured temperature exceeds a pre-set temperature range.
8. An electronic device comprising:
an array of magnetoresistive memory elements:
a magnetic field sensor unit for measuring an external magnetic field in the vicinity of the magnetoresistive memory elements, the magnetic field sensor unit generating an output signal representative of the measured external magnetic field;
disable circuitry responsive to the output signal to temporarily disable programming operation when the measured external magnetic field exceeds a threshold value; and
a memory buffer to store incoming data while programming operations are temporarily disabled.
9. Method for preventing erroneous programming of a magnetoresistive memory element during the presence of an external magnetic field, the method comprising:
measuring the external magnetic field in the vicinity of the magnetic memory element;
temporarily disabling any programming operation if the measured external magnetic field exceeds a threshold value; and
storing incoming data in a memory buffer while programming operations are temporarily disabled.
10. Method according to claim 9 , furthermore comprising sensing temperature in the neighborhood of the magnetoresistive memory clement and temporarily disabling any programming operation if the measured temperature exceeds a pre-set temperature range.
11. An array according to claim 1 , wherein the magnetoresistive memory elements have a magnetic tunneling junction structure, and wherein the magnetic field sensor unit is a rotated one of the magnetoresistive memory elements.