Patent Assignment
Reel/Frame 027222/0049
Lien
Recorded: 2011-11-14
Received: 2011-11-14
Pages: 22
Assignor
CROCUS TECHNOLOGY, INC.
Executed: 2011-08-05
Assignee
NXP B.V.
HIGH TECH CAMPUS 60, EINDHOVEN, NLX, 5656 AG, NETHERLANDS
Covered Properties
(28)
Playing Card Handling Devices Including Shufflers
Application:
13/204,295 →
Active Shielding for a Circuit Comprising Magnetically Sensitive Materials
Application:
12/277,537 →
Nanowire Magnetic Random Access Memory
Application:
12/088,724 →
Tamper-Resistant Packaging and Approach Using Magnetically-Set Data
Application:
10/541,884 →
Thermally Stable Reference Voltage Generator for Mram
Application:
11/547,336 →
Method and Device for Preventing Erroneous Programming of a Magnetoresistive Memory Element
Application:
10/579,935 →
Method and Device for Performing Active Field Compensation During Programming of a Magnetoresistive Memory Device
Application:
10/579,933 →
Non-Homogeneous Shielding of an Mram Chip with Magnetic Field Sensor
Application:
10/579,929 →
Data Retention Indicator for Magnetic Memories
Application:
10/579,934 →
Magnetic Field Shaping Conductor
Application:
10/574,365 →
Active Shielding for a Circuit Comprising Magnetically Sensitive Materials
Application:
10/570,174 →
Compensating a Long Read Time of a Memory Device in Data Comparison and Write Operations
Application:
10/565,149 →
Integrity Control for Data Stored in a Non-Volatile Memory
Application:
10/559,174 →
Simultaneous Reading from and Writing to Different Memory Cells
Application:
10/549,559 →
Mram Architecture for Low Power Consumption and High Selectivity
Application:
10/543,396 →
Memory Controller and Method for Writing to a Memory
Application:
10/541,266 →
Hardware Security Device for Magnetic Memory Cells
Application:
10/539,795 →
Method and Device for Protection of an Mram Device Against Tampering
Application:
10/539,548 →
Tamper-resistant packaging and approach
Application:
10/538,457 →
Tamper Resistant Packaging and Approach
Application:
10/538,454 →
Method and Device for Improved Magnetic Field Generation During a Write Operation of a Magnetoresistive Memory Device
Application:
10/536,293 →
Magnetic Memory Architecture with Shared Current Line
Application:
10/536,292 →
Method and Device to Detect the Likely Onset of Thermal Relaxation in Magnetic Data Storage Devices
Application:
10/536,291 →
Current Re-Routing Scheme for Serial-Programmed Mram
Application:
10/536,271 →
Method and device for persistent-memory mangement
Application:
10/533,735 →
Mram-Cell and Array-Architecture with Maximum Read-Out Signal and Reduced Electromagnetic Interference
Application:
10/515,475 →
Magnetoresistive Memory Cell Array and Mram Memory Comprising Such Array
Application:
10/515,155 →
Memory Having Plural Magnetic Layers and a Shielding Layer
Application:
09/886,184 →