Method and device for protection of an mram device against tampering
View Patent ↗Data, stored in MRAM-cells ( 12 ) should be protected against misuse or read-out by unauthorised persons. The present invention provides an array ( 10 ) of MRAM-cells ( 12 ) provided with a security device ( 14 ) for destroying data stored in the MRAM-cells ( 12 ) when they are tampered with. This is achieved by placing a permanent magnet ( 16 ) adjacent the MRAM-array ( 10 ) in combination with a soft-magnetic flux-closing layer ( 18 ). As long as the soft-magnetic layer ( 18 ) is present, the magnetic field lines ( 20 ) from the permanent magnet ( 16 ) are deviated and flow through this soft-magnetic layer ( 18 ). When somebody is tampering with the MRAM-array ( 10 ), e.g. by means of reverse engineering, and the flux-closing layer ( 18 ) is removed, the flux is no longer deviated and affects the nearby MRAM-array ( 10 ), thus destroying the data stored in the MRAM-cells ( 12 ).
1. A tamper-resistant memory device comprising:
a plurality of MRAM-cells; and
at least one security device coupled with said MRAM-cells, said security device including a magnetic source and a shielding layer;
wherein the shielding layer deviates magnetic field lines of said magnetic source such that the plurality of MRAM-cells are unaffected by said magnetic field lines; and
further wherein tampering with said tamper-resistant memory device comprises at least a partial removal of said shielding layer which causes said magnetic field lines to destroy at least some of the data stored in the plurality of MRAM-cells.
2. The tamper-resistant memory device of claim 1 , wherein the magnetic source is a permanent magnet.
3. The tamper-resistant memory device of claim 1 , wherein the shielding layer is a first soft-magnetic flux-closing layer.
4. The tamper-resistant memory device of claim 1 , wherein said memory device is configured to cause said shielding layer to separate from said magnetic source when the memory device is subject to tampering.
5. The tamper-resistant memory device of claim 1 further comprising a magnetic field shaping device.
6. The tamper-resistant memory device of claim 4 , wherein the magnetic field shaping device is a second soft-magnetic layer, the magnetic field source and first soft-magnetic layer being located adjacent the array of MRAM-cells at one side, and the second soft-magnetic layer being located adjacent the array of MRAM-cells at the opposite side thereof.