Granted Patent B2

US 8,488,372 · App. 13/158,316 · Granted Jul 16, 2013

Abstract

Claims (36)

1. A memory device comprising:

at least one magnetic random access memory (MRAM) cell including

a storage layer having a storage magnetization direction;

a sense layer having a sense magnetization direction; and

a spacer layer disposed between the storage layer and the sense layer; and

a field line magnetically coupled to the MRAM cell and configured to induce a magnetic field along a magnetic field axis,

wherein the storage layer has a single magnetic anisotropy axis,

wherein the single magnetic anisotropy axis is tilted relative to the magnetic field axis,

wherein, during a write operation, the storage magnetization direction is switchable between m directions to store data corresponding to one of m logic states, with m>2, at least one of the m directions is aligned relative to the single magnetic anisotropy axis, and at least another one of the m directions is aligned relative to the magnetic field axis, and

wherein, during a read operation, the sense magnetization direction is varied, relative to the storage magnetization direction, to determine the data stored by the storage layer.

2. The memory device of claim 1 , wherein m=4.

3. The memory device of claim 2 , wherein the MRAM cell is a 2-bit cell.

4. The memory device of claim 1 , wherein the single magnetic anisotropy axis is tilted at an angle θ relative to the magnetic field axis, with 0°<θ<90°.

5. The memory device of claim 4 , wherein 35°≦θ≦55°.

6. The memory device of claim 4 , wherein the field line extends along a field line axis, and the single magnetic anisotropy axis is tilted at an angle (90°−θ) relative to the field line axis.

7. The memory device of claim 1 , wherein a cross-sectional shape of at least one of the storage layer and the sense layer has an aspect ratio greater than 1.

8. The memory device of claim 7 , wherein the cross-sectional shape has a longest dimension axis, and the single magnetic anisotropy axis corresponds to the longest dimension axis.

9. The memory device of claim 1 , wherein the sense layer includes a soft ferromagnetic material, and the storage layer includes a hard ferromagnetic material.

10. The memory device of claim 9 , wherein a coercivity of the soft ferromagnetic material is smaller than a coercivity of the hard ferromagnetic material.

11. The memory device of claim 1 , wherein the MRAM cell further includes a pinning layer adjacent to the storage layer, and the pinning layer is configured to stabilize the storage magnetization direction relative to a threshold temperature.

12. The memory device of claim 11 , further comprising a bit line electrically coupled to the MRAM cell, and wherein, during the write operation, the bit line is configured to apply a heating current to heat the MRAM cell above the threshold temperature, such that the storage magnetization direction is temporarily unpinned prior to cooling of the MRAM cell below the threshold temperature.

13. The memory device of claim 12 , wherein, prior to cooling of the MRAM cell below the threshold temperature, the field line is configured to maintain the magnetic field, such that the storage magnetization direction is aligned relative to the magnetic field axis.

14. The memory device of claim 12 , wherein, prior to cooling of the MRAM cell below the threshold temperature, the field line is deactivated, such that the storage magnetization direction is aligned relative to the single magnetic anisotropy axis.

15. The memory device of claim 12 , wherein, during the read operation, the bit line is configured to apply a sense current to determine a resistance of the MRAM cell, and the resistance is indicative of a degree of alignment between the storage magnetization direction and the sense magnetization direction.

16. The memory device of claim 15 , wherein, during the read operation, the sense magnetization direction is varied to determine a minimum of the resistance.

17. The memory device of claim 1 , wherein, during the read operation, the sense magnetization direction is switched between at least a subset of the m directions.

18. A method of operating a memory device, comprising:

providing a magnetic random access memory (MRAM) cell including a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction, the sense layer having a single magnetic anisotropy axis; and

during a read operation,

inducing a read magnetic field along a magnetic field axis, such that the sense magnetization direction is aligned relative to the magnetic field axis, wherein the single magnetic anisotropy axis is tilted at an angle θ relative to the magnetic field axis, with 0°<θ<90°;

determining a first resistance value of the MRAM cell while the read magnetic field is being applied, with the first resistance value being indicative of a degree of alignment between the storage magnetization direction and the sense magnetization direction when the sense magnetization direction is aligned relative to the magnetic field axis;

deactivating the read magnetic field, such that the sense magnetization direction is aligned relative to the single magnetic anisotropy axis; and

determining a second resistance value of the MRAM cell after the deactivating of the read magnetic field, with the second resistance value being indicative of a degree of alignment between the storage magnetization direction and the sense magnetization direction when the sense magnetization direction is aligned relative to the single magnetic anisotropy axis.

19. The method of claim 18 , wherein 35°≦θ≦55°.

20. The method of claim 18 , further comprising:

during a write operation, aligning the storage magnetization direction relative to one of the magnetic field axis and a magnetic anisotropy axis of the storage layer.

Assignments (9)